Dry Etching

Laermer, Franz

doi:10.1016/b978-044452190-3.00009-4

Cited by 22 publications

(22 citation statements)

References 36 publications

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“…The C – V results do not show a substantial increase, which indicates that the anneal does not induce any parasitic capacitance. The apparent reduction of capacitance at a reverse bias of -5 V can be attributed to the high-temperature conformal sidewall doping that passivates surface states generated by the aggressive vertical etching. ,, This post backfilling annealing process is utilized for each of the filling techniques described in this paper to alleviate the generation of these surface states, noise generators, and recombination sites. Figure a shows the absolute thermal neutron detection spectra for the three backfilling methods.…”

Section: Resultsmentioning

confidence: 99%

“…After trench patterning, a deep silicon etch (DSE) with SF 6 and C 4 F 8 gases at a temperature of 180 °C is used for the silicon. This etching process is known as the Bosch process where the alternating gases provide the gaseous etchant and passivation pulses to allow uniform columnar Si etching Figure shows a schematic of the fabrication process within the diode area and how the Si trenches are generated from the metallized contact and AlSi hard mask.…”

Section: Methodsmentioning

confidence: 99%

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Scalable ¹⁰B Powder Backfilling Process for Large-Area High-Efficiency Microstructured Thermal Neutron Detectors

Shamsi

Rodriguez-Davila

Fernández‐Izquierdo

et al. 2023

ACS Appl. Eng. Mater.

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This paper demonstrates a simple and scalable process compatible with Si-based technology to fabricate micro-structured thermal neutron (E neutron = ∼25 meV) sensors with high detection efficiency. The sensors feature 40 μm-deep vertically etched silicon micro-structured diodes that are subsequently backfilled with boron-10 (10B) for thermal neutron detection using sedimentation and aerosol methods. These filling methods substantially reduce the fabrication time while producing high-manufacturing-yield thermal neutron detectors. The efficiency of the resulting neutron detectors is directly correlated with trench filling density and uniformity, when compared to traditionally gravity-assisted 10B filling methods. The experimental results are also compared and verified with Monte Carlo nuclear particle (MCNP) code simulations. Not only does this backfilling process enable a neutron conversion layer in the diodes, but also 10B is used for conformal doping of the trenches after a high-temperature annealing that improves the reverse bias leakage current, yielding high detection efficiency. The fabricated devices demonstrate a thermal neutron detection efficiency of up to 25% in a large active device area of 210 mm2.

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Section: Resultsmentioning

confidence: 99%

Section: Methodsmentioning

confidence: 99%

Scalable ¹⁰B Powder Backfilling Process for Large-Area High-Efficiency Microstructured Thermal Neutron Detectors

Shamsi

Rodriguez-Davila

Fernández‐Izquierdo

et al. 2023

ACS Appl. Eng. Mater.

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“…Figure B shows a sketch of the fabrication procedure, while SI Figure S2 introduces the process cycle in further detail. A standard two step Bosch process was expanded by an intermittent step to allow for higher controllability during the etching procedure and to permit the reliable fabrication of high aspect ratio structures with minimal variations in etch angles as necessary during the application of nanoscale masks . Accordingly, the custom-designed etch cycle consisted of the following three steps: (I) deposition of a C 4 F 8 protective layer covering the bottom and the sidewalls of the pores, (II) removal of the protective layer on the bottom of the pores through primarily physical etching (anisotropic) based on accelerated ions using SF 6 , and (III) combined chemical (isotropic) and physical etching of the protective layer on the sidewalls and the exposed silicon substrate at the bottom of the pores with SF 6 .…”

Section: Resultsmentioning

confidence: 99%

High Aspect Ratio Nanoscale Pores through BCP-Based Metal Oxide Masks and Advanced Dry Etching

Esmeraldo Paiva,

Gerlt,

Läubli

et al. 2023

ACS Appl. Mater. Interfaces

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The reliable and regular modification of the surface properties of substrates plays a crucial role in material research and the development of functional surfaces. A key aspect of this is the development of the surface pores and topographies. These can confer specific advantages such as high surface area as well as specific functions such as hydrophobic properties. Here, we introduce a combination of nanoscale self-assembled block-copolymer-based metal oxide masks with optimized deep reactive ion etching (DRIE) of silicon to permit the fabrication of porous topographies with aspect ratios of up to 50. Following the evaluation of our procedure and involved parameters using various techniques, such as AFM or SEM, the suitability of our features for applications relying on high light absorption as well as efficient thermal management is explored and discussed in further detail.

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“…The TDM process consisted of a deposition step for passivation of polymeric species to the feature surface and a spontaneous etching step by F radical-based etching. In the above model, the etching step was divided into the polymer removal stage at the initial etching step and the isotropic etching stage similar to the BOSCH process . By adjusting the process step time, ARDE was controlled by finding the balance of passivation thickness and etched depth.…”

Section: Introductionmentioning

confidence: 99%

Asynchronously Pulsed Plasma for High Aspect Ratio Nanoscale Si Trench Etch Process

Kim

Yeom

2023

ACS Appl. Nano Mater.

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The fabrication of high aspect ratio Si trenches has been becoming difficult due to the decrease in critical dimension (CD) to deep nanoscale. Especially, aspect ratio dependent etching (ARDE), which decreases the etch rate as the pattern width gets smaller, makes process uniformity get worse. In this study, the effects of bias pulsing parameters during asynchronous pulsing, which alternatively applies the source power and bias power, as well as the effect of additive gas such as CF4 and C4F8 on the nanoscale Si trench etch characteristics during Cl2/Ar plasma etching were investigated. It was found that the bias pulsing parameters during the asynchronous pulsing, such as bias pulse duty ratio and bias pulse delay time, can affect the etch characteristics such as etch rate, etch selectivity, and ARDE by changing the ion dose and ion energy during the etching. However, the variation of bias pulse parameters during the asynchronous pulsing did not change the etch profile noticeably, and it showed bowed Si trench etch profiles. To improve the etch profile, the addition of fluorocarbon gas such as CF4 and C4F8 was required, and by using C4F8 instead of CF4, more anisotropic Si etch profile without sidewall bowing could be obtained due to the improved sidewall passivation by a fluorocarbon layer even though it degraded etch selectivity and ARDE. Therefore, it is believed that by controlling the bias pulsing parameters with additive gas, nanoscale Si trench etch characteristics can be more easily controlled.

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Dry Etching

Cited by 22 publications

References 36 publications

Scalable ¹⁰B Powder Backfilling Process for Large-Area High-Efficiency Microstructured Thermal Neutron Detectors

Scalable ¹⁰B Powder Backfilling Process for Large-Area High-Efficiency Microstructured Thermal Neutron Detectors

High Aspect Ratio Nanoscale Pores through BCP-Based Metal Oxide Masks and Advanced Dry Etching

Asynchronously Pulsed Plasma for High Aspect Ratio Nanoscale Si Trench Etch Process

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Dry Etching

Cited by 22 publications

References 36 publications

Scalable 10B Powder Backfilling Process for Large-Area High-Efficiency Microstructured Thermal Neutron Detectors

Scalable 10B Powder Backfilling Process for Large-Area High-Efficiency Microstructured Thermal Neutron Detectors

High Aspect Ratio Nanoscale Pores through BCP-Based Metal Oxide Masks and Advanced Dry Etching

Asynchronously Pulsed Plasma for High Aspect Ratio Nanoscale Si Trench Etch Process

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Product

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Scalable ¹⁰B Powder Backfilling Process for Large-Area High-Efficiency Microstructured Thermal Neutron Detectors

Scalable ¹⁰B Powder Backfilling Process for Large-Area High-Efficiency Microstructured Thermal Neutron Detectors