Dry etching of extreme ultraviolet lithography mask structures in inductively coupled plasmas

Kim, D. Y.; Lee, H. J.; Jung, Hye Young; Lee, N.-E.; Kim, T. G.; Kim, B. H.; Ahn, Jinho; Kim, C. Y.

doi:10.1116/1.2902964

Cited by 5 publications

(2 citation statements)

References 23 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The etching was executed on blanket wafers and the film thickness was characterized by Spectroscopic Ellipsometry. Figure 8a shows that CF4/O2 based etching can achieve selectivity up to 3 through process optimization, increased by 70% compared to Cl2-based etching, though being smaller than that of Ta(B)N absorber(≧10) [23][24] . CF4/O2 gas ratio effect on etching was displayed in Figure 8b, a higher etch selectivity is achieved at CF4/O2 75:25, suggesting an optimized spot to enhance selectivity.…”

Section: Resultsmentioning

confidence: 99%

EUV APSM mask prospects and challenges

Lin,

Lee,

Chen

et al. 2023

Photomask Technology 2023

View full text Add to dashboard Cite

Section: Resultsmentioning

confidence: 99%

EUV APSM mask prospects and challenges

Lin,

Lee,

Chen

et al. 2023

Photomask Technology 2023

View full text Add to dashboard Cite

“…[1][2][3][4][5] A critical area in the production of these masks is the detection and reduction of defects on these masks 6 which can affect the whole production process. They have high normal incidence reflectivity in the EUV spectral range and are the focusing and imaging components in EUV lithography.…”

Section: A Backgroundmentioning

confidence: 99%

Origin of defects on targets used to make extreme ultraviolet mask blanks

Andruczyk

Ruzic

et al. 2013

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

View full text Add to dashboard Cite

The effects of oxygen plasma on the chemical composition and morphology of the Ru capping layer of the extreme ultraviolet mask blanks Particle formation is a major problem in extreme ultraviolet masks, and one source of these particles has been identified to be the targets used to produce the mask surfaces. In particular, the silicon (Si) and ruthenium (Ru) target appear to produce more particles, especially silicon. The evidence of this is seen as a rough region on the edges of the silicon target. The features in the region were found to be triangular mesas pointing in the direction of the incident beam. The aim of this research is to prevent the mesa formation features on the target and thus reduce particle formation on the target. Both Si and Ru targets were sputtered using different ion beam conditions to understand the mesa formation mechanisms on the target and explore the ion beam conditions that can mitigate mesas. A simple 2D Monte-Carlo computer model (Illinois surface analysis model) was used to understand the formation of mesas with different incident angles of ion beam (0 , 35 , 54 , 75 ) that agrees with the shapes of mesas seen in the experiments. Additionally, SRIM was used to calculate sputtering yields to better understand the different mechanisms between Si and Ru. It is concluded from both experiment and calculation results that an effective way to stop mesas formation is to have a sample oscillating between 0 and the desired angle during sputtering.

show abstract

Selective dry etching of attenuated phase-shift mask materials for extreme ultraviolet lithography using inductively coupled plasmas

Jung

Park

Lee

et al. 2009

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

Self Cite

View full text Add to dashboard Cite

Articles you may be interested inFocused helium and neon ion beam induced etching for advanced extreme ultraviolet lithography mask repair Infinitely high selective inductively coupled plasma etching of an indium tin oxide binary mask structure for extreme ultraviolet lithography Improvement of imaging properties by optimizing the capping structure in extreme ultraviolet lithography Among the core extreme ultraviolet lithography ͑EUVL͒ technologies, mask fabrication is of considerable importance due to the use of new reflective optics having a completely different configuration from that of conventional photolithography. This study investigated the etching properties of attenuated phase-shift mask materials for EUVL, such as TaN ͑attenuator layer͒, Al 2 O 3 ͑spacer͒, Mo ͑phase shifting layer͒, Ru ͑buffer/capping/etch-stop layer͒, and Mo-Si multilayer ͑reflective layer͒ by varying the Cl 2 / Ar gas flow ratio, dc self-bias voltage ͑V dc ͒, and etch time in inductively coupled plasmas. For the fabrication of the attenuated EUVL mask structure proposed herein, the TaN, Al 2 O 3 , and Mo layers need to be etched with no loss of the Ru layer on the Mo-Si multilayer. The TaN and Al 2 O 3 layers were able to be etched in BCl 3 / Cl 2 / Ar plasmas with a V dc of −100 V and the Mo layer was etched with an infinitely high etch selectivity over the Ru etch-stop layer in a Cl 2 / Ar plasma with a V dc of −25 V even with increasing overetch time.

show abstract

Dry etching of extreme ultraviolet lithography mask structures in inductively coupled plasmas

Cited by 5 publications

References 23 publications

EUV APSM mask prospects and challenges

EUV APSM mask prospects and challenges

Origin of defects on targets used to make extreme ultraviolet mask blanks

Selective dry etching of attenuated phase-shift mask materials for extreme ultraviolet lithography using inductively coupled plasmas

Contact Info

Product

Resources

About