Selective dry etching of attenuated phase-shift mask materials for extreme ultraviolet lithography using inductively coupled plasmas

Jung, Hye Young; Park, Y. R.; Lee, H. J.; Lee, N.-E.; Jeong, Chul; Ahn, Jinho

doi:10.1116/1.3253532

Cited by 7 publications

(3 citation statements)

References 21 publications

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“…Previously, molybdenum gratings with larger feature sizes have been fabricated by dry etching processes [30][31][32][33], but only a few papers report the etching of nanoscale Mo structures [19]. In our etching process the gas mixture of Cl 2 /O 2 has fixed flows of 12.8 sccm/2 sccm in order to achieve Mo structures with sub-100 nm feature sizes.…”

Section: Molybdenum Grating Fabricationmentioning

confidence: 99%

Sub-10 nm patterning using EUV interference lithography

Päivänranta¹,

Langner²,

Kirk³

et al. 2011

Nanotechnology

166

134

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Extreme ultraviolet (EUV) lithography is currently considered as the leading technology for high-volume manufacturing below sub-20 nm feature sizes. In parallel, EUV interference lithography based on interference transmission gratings has emerged as a powerful tool for industrial and academic research. In this paper, we demonstrate nanopatterning with sub-10 nm resolution using this technique. Highly efficient and optimized molybdenum gratings result in resolved line/space patterns down to 8 nm half-pitch and show modulation down to 6 nm half-pitch. These results show the performance of optical nanopatterning in the sub-10 nm range and currently mark the record for photon-based lithography. Moreover, an efficient phase mask completely suppressing the zeroth-order diffraction and providing 50 nm line/space patterns over large areas is evaluated. Such efficient phase masks pave the way towards table-top EUV interference lithography systems.

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Section: Molybdenum Grating Fabricationmentioning

confidence: 99%

Sub-10 nm patterning using EUV interference lithography

Päivänranta¹,

Langner²,

Kirk³

et al. 2011

Nanotechnology

166

134

View full text Add to dashboard Cite

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“…26 Eight Mo/Ru bilayers would be deposited on a Si film, each consisting of approximately 20 nm of Mo on 2 nm of Ru. II.…”

Section: B Manufacturing Processes and Tolerancesmentioning

confidence: 99%

Scanned-spot-array extreme ultraviolet imaging for high-volume maskless lithography

Johnson¹

2012

Journal of Vacuum Science &Amp; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phen

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Absorber stack with transparent conductive oxide layer for extreme ultraviolet lithographyHigh-volume maskless lithography systems typically operate by raster-scanning a large array of focused radiation spots across an exposure surface while the spot intensities are modulated. This paper outlines a design concept and optical simulation results for a spot-scanning extreme ultraviolet (EUV) system using a 10Â-reduction, flat-image Schwarzschild projection system consisting of only two mirrors. The spots are generated in the system's object space by means of blazed, multilevel zone-plate microlenses configured as Schupmann achromatic doublets, which are highly efficient and are designed to nullify geometric aberration in the projection system. Coherent proximity effects are eliminated by partitioning the exposure radiation into discrete, diffraction-limited image spots, which have convergence cones of numerical aperture 0.3 at the 13.5-nm operating wavelength. The image spot separation is 2.5 lm, and the spot array covers a 10-mm square image field, sufficient to achieve printing throughput of order 30 (300-mm) wafers per hour. For simplicity, the spot intensities are all controlled by a single source modulator, allowing printing of 2.5 -lm periodic patterns without a spatial light modulator. The microlens manufacturing technology would be similar to that used for EUV mirrors and phase-shift masks, but with dramatically less stringent tolerance requirements.

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“…EUVL EPSM application and performance have been previously studied by several authors. [1][2][3][4][5] Last year, we have conducted detailed wafer level study of a 6% EUVL EPSM and EUVL binary mask via ADT wafer exposure. [6][7] In the experiment, we used SEVR59 resist and the exposure conditions of numeric aperture (NA) NA=0.25, partial coherence =0.5.…”

Section: Introductionmentioning

confidence: 99%