Dry etching of GaSb and InSb in

Mileham, Jeffrey; Lee, J W; Lambers, E. S.; Pearton, S. J.

doi:10.1088/0268-1242/12/3/016

Cited by 13 publications

(10 citation statements)

References 28 publications

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“…In the course of process parameter optimization for GaSb, deep etching typical dependencies are observed (see, for example, [11,27,29]). The GaSb etch rate is increased with growing dc bias voltage.…”

Section: Resultsmentioning

confidence: 99%

Deep reactive ion etching of GaSb in Cl₂/Ar-plasma discharges using single-layer soft mask technologies

Giehl

Kessler

Grosse

et al. 2003

J. Micromech. Microeng.

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Technologies for GaSb dry etching employing Cl2/Ar-plasma discharges are reported. Etch rates higher than 2 μm min−1 are achieved in a conventional reactive ion etching (RIE) chamber. To our knowledge these are the highest etch rates reported in GaSb dry-etch technology with conventional RIE. Also, three different single-layer soft mask processes are described and compared with respect to suitability for deep RIE of GaSb. Soft masks have many advantages over (metal) hard masks, such as easy and inexpensive processing, low pinhole density and high etching reproducibility. The well known AZ5214E resist from Clariant allows for GaSb etch depths of up to 6.4 μm keeping dimensional accuracy. Using TI 35ES photoresist, developed by MicroChemicals, GaSb etch profiles of up to 51 μm depth are obtained revealing considerable dimensional stability. This photoresist material is reported in the literature for the first time. By applying optimized GaSb dry-etch parameters, SU-8–50, an epoxy-type resist, developed by MicroChem Corp., will show an outstanding resist mask lifetime of up to 420 min, if SU-8–50 is spin-coated to a thickness of 80 μm. Thus it is possible to achieve GaSb etch depths beyond 100 μm. Deep dry etching of GaSb can be exploited to fabricate fiber or capillary connections, or to create substrate windows for backside-illuminated photodetectors for the mid-infrared (MIR) wavelength range.

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Section: Resultsmentioning

confidence: 99%

Deep reactive ion etching of GaSb in Cl₂/Ar-plasma discharges using single-layer soft mask technologies

Giehl

Kessler

Grosse

et al. 2003

J. Micromech. Microeng.

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show abstract

“…Sharp and vertical sidewalls were demonstrated by adding polymer forming gas mixtures like CH 4 /H 2 to the plasma chemistry [8][9][10]. This method again suffers from a comparatively low etch rate and could also contaminate the sample surface and etching chamber.…”

Section: Introductionmentioning

confidence: 99%

Inductively coupled plasma etching of III–V antimonides in BCl3/SiCl4 etch chemistry

2008

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“…Compared to wet chemical etching, dry etching provides a more anisotropic profile, greater repeatability, improved etch depth control, and higher aspect ratio. [8][9][10][11] GaSb etch rates of 5000, 3000, and 2500 Å/min are reported in Cl 2 /Ar, BCl 3 /Ar, and CH 4 /H 2 /Ar ECR discharges, respectively. 7 Since wet etching of AlGaAsSb commonly leaves a heavily oxidized surface, only single-step etching is achievable with any predictability.…”

Section: Introductionmentioning

confidence: 99%

Inductively coupled plasma etching of III–V antimonides in BCl3/Ar and Cl2/Ar

Zhang¹,

Lester²,

Shul³

et al. 1999

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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Articles you may be interested inInductively coupled plasma etching of through-cell vias in III-V multijunction solar cells using SiCl4/Ar J. Vac. Sci. Technol. B 31, 06FF05 (2013); 10.1116/1.4822015Detailed analysis of the influence of an inductively coupled plasma reactive-ion etching process on the hole depth and shape of photonic crystals in In P ∕ In Ga As P Low damage dry etching of III-V materials for heterojunction bipolar transistor applications using a chlorinated inductively coupled plasma Inductively coupled plasma ͑ICP͒ etching characteristics of GaSb and AlGaAsSb have been investigated in BCl 3 /Ar and Cl 2 /Ar plasmas. The etch rates and selectivity between GaSb and AlGaAsSb are reported as functions of plasma chemistry, ICP power, rf self-bias, and chamber pressure. It is found that physical sputtering desorption of the etch products plays a dominant role in BCl 3 /Ar ICP etching, while in Cl 2 /Ar plasma, the chemical reaction dominates the etching. GaSb etch rates exceeding 2 m/min are achieved in Cl 2 /Ar plasmas with smooth surfaces and anisotropic profiles. In BCl 3 /Ar plasmas, etch rates of 5100 and 4200 Å/min are obtained for GaSb and AlGaAsSb, respectively. The surfaces of both GaSb and AlGaAsSb etched in BCl 3 /Ar plasmas remain smooth and stoichiometric over the entire range of plasma conditions investigated. This result is attributed to effective removal of etch products by physical sputtering. For a wide range of plasma conditions, the selectivity between GaSb and AlGaAsSb is close to unity, which is desirable for fabricating etched mirrors and gratings for Sb-based midinfrared laser diodes.

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Dry etching of GaSb and InSb in

Cited by 13 publications

References 28 publications

Deep reactive ion etching of GaSb in Cl₂/Ar-plasma discharges using single-layer soft mask technologies

Deep reactive ion etching of GaSb in Cl₂/Ar-plasma discharges using single-layer soft mask technologies

Inductively coupled plasma etching of III–V antimonides in BCl3/SiCl4 etch chemistry

Inductively coupled plasma etching of III–V antimonides in BCl3/Ar and Cl2/Ar

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Dry etching of GaSb and InSb in

Cited by 13 publications

References 28 publications

Deep reactive ion etching of GaSb in Cl2/Ar-plasma discharges using single-layer soft mask technologies

Deep reactive ion etching of GaSb in Cl2/Ar-plasma discharges using single-layer soft mask technologies

Inductively coupled plasma etching of III–V antimonides in BCl3/SiCl4 etch chemistry

Inductively coupled plasma etching of III–V antimonides in BCl3/Ar and Cl2/Ar

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Deep reactive ion etching of GaSb in Cl₂/Ar-plasma discharges using single-layer soft mask technologies

Deep reactive ion etching of GaSb in Cl₂/Ar-plasma discharges using single-layer soft mask technologies