Dry etching resistance of resist base polymer and its improvement

Kishimura, Shinji; Kimura, Yoshika; Sakai, Juro; Tsujita, Kouichirou; Matsui, Yasuji

doi:10.1117/12.275894

Cited by 6 publications

(1 citation statement)

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“…Novolac resist was hardened by UV cure and ion implantation 6) . In terms of KrF resist and ArF resist, UV light 7) , VUV light 8) , electron beam 9) and ion implantation [10][11] were investigated. In addition, spin-on carbon (SOC) film in tri-layer resist process was hardened by ion implantation to avoid wiggling during etching 12) .…”

Section: Introductionmentioning

confidence: 99%

Ion implantation as insoluble treatment for resist stacking process

Nakamura

Shibata

Rikimaru

et al. 2008

Advances in Resist Materials and Processing Technology XXV

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With regard to the resist stacking process, it was proposed that the implantation of ions whose acceleration voltage was below 50 kV could make the lower-layer resist insoluble for the upper-layer resist patterning process. But the lower-layer resist pattern was observed to be peeled off in a pattern. In another type of the pattern whose lower-layer pattern was fastened by the upper-layer pattern, there were caves in the bottom of the lower-layer resist pattern. From the calculation of the projected range of the ions, it was found that the ions cannot reach the bottom of the lower-layer resist pattern, so that the bottom of the lower-layer resist was not hardened. The peeling-off was due to the dissolution of the bottom in the lower-layer resist during the development of the upper-layer resist pattern. When the acceleration voltage of the implanted ions is set so that the projected range of the ions is larger than the resist thickness, the lower-layer resist can be made effectively insoluble for the upper-layer resist patterning process. The ion implanted pattern can be used as the etching mask. Moreover, the ions can be prevented from penetrating the film to be etched by adjusting the acceleration voltage.

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Section: Introductionmentioning

confidence: 99%

Ion implantation as insoluble treatment for resist stacking process

Nakamura

Shibata

Rikimaru

et al. 2008

Advances in Resist Materials and Processing Technology XXV

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A novel UV baking process to improve DUV photoresist hardness

Hunag

Tsui

Shieh

et al.

1999 International Symposium on VLSI Technology, Systems, and Applications. Proceedings of Technical Papers. (Cat. No.99TH8453)

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Effects of fluorocarbon polymer deposition on the selective etching of SiO2/photoresist in high density plasma

Chu

Ahn

Kim

et al. 2000

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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Articles you may be interested inInfinitely high etch selectivity during CH 2 F 2 / H 2 dual-frequency capacitively coupled plasma etching of silicon nitride to chemical vapor-deposited a -C A new periodic two-step process composing SiO 2 etching with high bias radio frequency ͑rf͒ power and fluorocarbon deposition with low bias rf power was studied for the highly selective etching of SiO 2 to photoresist ͑PR͒. In this experiment, the time scale of each step is longer than the conventional time-modulation technique in order to maximize the protection layer on PR and prevent the etch stop. Many works have focused on the gaseous chemical species especially CF 2 radicals for selective surface reaction. However, normally utilizing only the difference of stoichiometric surface reaction, they inherently limit the etching conditions such as dependence on the chemical composition of PR, densities, and impurities of SiO 2 layers. And these conventional processes severely suffer reactive ion etching lag or etch stop in high selective etching. The new process utilizes fluorocarbon deposition with low bias rf power to increase the mask selectivity by enhancing the difference between the polymer thickness on the mask and that on the bottom surface of hole. After the etching step, the polymer film remains only on the mask, and then the higher selectivity of SiO 2 to PR can be achieved. In this article it has been investigated whether the polymer deposition in the suggested process is governed by aspect ratio of holes, surface temperature, bias rf, and microwave powers. The ratio of the amount of etching to deposition is a very important factor in determining the selectivity. With the process a small and deep contact etching with thin PR is possible without shortage of mask thickness with the mask selectivity improved from 6 to 20. We can also find that the etch rate of this new process does not depend significantly on the aspect ratio.

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Dry etching resistance of resist base polymer and its improvement

Cited by 6 publications

References 0 publications

Ion implantation as insoluble treatment for resist stacking process

Ion implantation as insoluble treatment for resist stacking process

A novel UV baking process to improve DUV photoresist hardness

Effects of fluorocarbon polymer deposition on the selective etching of SiO2/photoresist in high density plasma

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