Dry oxidation resistance of ultrathin nitride films: Ordered and amorphous silicon nitride on Si(111)

Abstract

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Augmented Cell Performance of NO-Based Storage Dielectric by N<formula formulatype="inline"><tex>$_2$ </tex></formula>O-Treated Nitride Film for Trench DRAM

“…2-XPS Si2p spectra for the nitride film of the control sample, N2O_1, and N2O_2. The common peak at 99.2 eV for all the three nitride films corresponds to the signal of the Si substrate, while the other peak stems from the Si-N bonding feature [10], [11]. As the number of times the N 2 O treatment increases, the peak at 102.3 eV for the control sample shifts to 103.1 eV for N2O_1 and 103.4 eV for N2O_2, which indicates that more oxygen atoms can be incorporated into the nitride film and reduced excess Si atoms and hydrogen-related species can be achieved through N 2 O annealing.…”

Silicon Nitride Encapsulated Silicon Nanocrystals for Lithium Ion Batteries

“…Thus, it is clear that the surface SiN x formed in this process was partially converted to a SiO x N y coating. Although it is well known that SiN x films can act as barriers to suppress oxidation of Si surfaces, there is a critical thickness required to protect the underlying Si . Wallace et al investigated the oxidation resistance of thin SiN x layers formed by thermal nitridation of the Si(111) surface with NH 3 .…”

“…They demonstrated that ordered and disordered SiN x films that were 0.3 and 0.2 nm thick, respectively, effectively suppressed oxidation of the underlying Si by O 2 at 600 °C. However, they noted that only an ordered Si 3 N 4 coating suppressed oxidation under atmospheric conditions . Thus, the low temperatures predicted for the Si NCs during interaction with active N‐containing species in the plasma afterglow led to a thin, disordered nitride coating that did not effectively suppress oxidation of the underlying Si NC surface.…”

Low leakage current characteristics of YMnO3 on Si(111) using an ultrathin buffer layer of silicon oxynitride

“…Wallace and Wei have recently reported that very thin silicon nitride films (dϽ2 nm) have the ability to prevent oxygen from incorporating into Si͑111͒ surfaces at high temperature for an exposure to subatmospheric oxygen. 6 The ultrathin oxynitride buffer layers used in this study were also found to exhibit the high resistance to oxidation similarly. In this study, we have grown hexagonal phase of YMnO 3 ͑YMO͒.…”