Low leakage current characteristics of YMnO3 on Si(111) using an ultrathin buffer layer of silicon oxynitride

Abstract

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Epitaxial and oriented YMnO3 film growth by pulsed laser deposition

“…For last few years, the YMnO 3 thin film has attracted interest as a candidate for application to the nonvolatile ferroelectric random access memory because YMnO 3 has good retention property [4][5][6][7]. YMnO 3 films have been synthesized by various techniques such as molecular beam epitaxy (MBE) [5,6], pulsed laser deposition (PLD) [7][8][9][10][11][12], sputtering [13][14][15], and chemical solution routes [16][17][18][19][20][21][22]. Imada et al [5] and Ito et al [7] reported that YMnO 3 films synthesized by MBE and PLD on (1 1 1)Pt/(0 0 0 1)Al 2 O 3 and (1 1 1)Y 2 O 3 /(1 1 1)Si grew epitaxially and displayed the full width half maximum (FWHM) of about 0.7 in X-ray diffraction rocking curve.…”

The effects of drying temperature on the crystallization of YMnO3 thin films prepared by sol-gel method using alkoxides

“…3À5 In the MFSFET structure, it is necessary to provide form a good interface of ferroelectric thin films with Si and to obtain a relatively low permittivity. 6,7 Generally, the ferroelectric materials for FRAMs are classified into Pb-containing group such as PbTiO 3 (PT), Pb(Zr,Ti)O 3 (PZT), (Pb,La)(Zr,Ti)O 3 …”

Two‐Layer Crystallization of Amorphous YMnO3 Thin Films on Si (100) Substrates

“…To resolve these problems, ferroelectric materials with a low dielectric constant and new buffer layers at the ferroelectric/Si interface have been extensively investigated. 5,6 Among the ferroelectric thin films, YMnO 3 has been proposed as a promising ferroelectric material for metal-ferroelectricsemiconductor (MFS) structures. [7][8][9][10] The YMnO 3 has a hexagonal structure and a unipolarization direction along [0001].…”