DS Schottky barrier cylindrical GAA MOSFET: nanosensor for biochips

Abstract

This paper presents an extensive mathematical study of a proposed nanogap-embedded dopant-segregated (DS) Schottky barrier (SB) cylindrical gate all-around (CGAA) metal-oxide-semiconductor field-effect transistor (MOSFET) of negatively/positively charged and neutral species observed by numerical simulation using an Atlas three-dimensional device simulator for electrical and label-free detection of bio/chemical (DNA, pH) and neutral species (protein) respectively as a nanosensor in the biomedical field at high sensitivity for direct electronic readout. This is the first time that the use of a nanogap-embedded DS-SB-CGAA MOSFET as a bio/chemical sensor has been reported. The threshold voltage (V th) shift and change in current are considered as sensing metrics to detect biological or chemical species when they are immobilized in the carvel-built region. The shift in on current (I on) of the nanogap-embedded DS-SB-CGAA MOSFET is also taken as a sensing metric, and better performance is observed compared to a conventional SB-CGAA MOSFET sensor. It is advantageous in terms of its low power/energy consumption as well as from the point of view of integration with the forthcoming silicon-based lab-on-chip systems due to the compatibility with the complementary metal-oxide semiconductor process.

A physics‐based threshold voltage model for hetero‐dielectric dual material gate Schottky barrier MOSFET

“…It is furnished that high‐k dielectric near gate metal and low‐k near substrate yields lowest interface trap density and ambipolar effect . Further, a dielectric modified SB‐MOSFET–based biochip for low power consumption label‐free detection of bio/chemical detection application is proposed . The gate dielectric is confined in 2 nm thickness to attain better sensitivity in gate all around SB‐MOSFET.…”

“…22 Further, a dielectric modified SB-MOSFET-based biochip for low power consumption label-free detection of bio/chemical detection application is proposed. 23 The gate dielectric is confined in 2 nm thickness to attain better sensitivity in gate all around SB-MOSFET. Furthermore, the advantages of dual metal gate SB-MOSFET is advantages to reduce ambiploar current in single gate SB device.…”