2008
DOI: 10.1088/0960-1317/18/10/105011
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Dual-beam actuation of piezoelectric AlN RF MEMS switches monolithically integrated with AlN contour-mode resonators

Abstract: This work reports on piezoelectric Aluminum Nitride (AlN) based dual-beam RF MEMS switches that have been monolithically integrated with AlN contour-mode resonators. The dual-beam switch design presented in this paper intrinsically compensates for the residual stress in the deposited films, requires low actuation voltage (5 to 20 V), facilitates active pull-off to open the switch and exhibits fast switching times (1 to 2 μs). This work also presents the combined response (cascaded S parameters) of a resonator … Show more

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Cited by 88 publications
(59 citation statements)
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“…[9][10][11][12] Out of these two materials, AlN stands out for its high dielectric strength, ease of deposition, and processing ͑involving low temperatures and nontoxic precursors͒, and its potential for integration with CMOS devices. AlN has previously been used for the fabrication of MEMS contour mode filters, 13 film bulk-wave acoustic resonator ͑FBAR͒ filters 14 ͑AlN being the material of choice for commercial FBAR production͒, high frequency resonators, 15 and switches.…”
mentioning
confidence: 99%
“…[9][10][11][12] Out of these two materials, AlN stands out for its high dielectric strength, ease of deposition, and processing ͑involving low temperatures and nontoxic precursors͒, and its potential for integration with CMOS devices. AlN has previously been used for the fabrication of MEMS contour mode filters, 13 film bulk-wave acoustic resonator ͑FBAR͒ filters 14 ͑AlN being the material of choice for commercial FBAR production͒, high frequency resonators, 15 and switches.…”
mentioning
confidence: 99%
“…The working principle (shown in Fig. 3) of the switch is very similar to the dual-beam actuation switch that had been developed earlier [11]- [12]. In this novel design bimorph actuation (two actuation layers) can be implemented, whereas solely unimorph actuation (single layer actuation) was possible in the previous design in which the actuator and the RF signal were stacked on top of each other.…”
Section: A Switch Designmentioning
confidence: 96%
“…The switch process (Fig. 4) is an 8-mask post-CMOS compatible process that is very similar to the one described in [11]- [12]. The addition of a mask, with respect to the previous process, is for the planarization of the contact tip over the etch pit by using photoresist as the refill layer.…”
Section: Fabricationmentioning
confidence: 99%
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