Dual Damascene Interconnect of Copper and Low Permittivity Dielectric for High Performance Integrated Circuits

Zhao, Baojun; Feiler, D.; Ramanathan, Vidya; Liu, Q. Z.; Brongo, M.; Wu, Jia-Rong; Zhang, H.; Kuei, J.; Young, David; Brown, James Ward; Vo, Cong Phat; Xia, Weimin; Chu, Cao; Zhou, Jiechao; Nguyen, Cong Tien; Tsau, L.; Dornisch, D.; Camilletti, Lawrence; Ding, Peng; Lai, Gigi; Chin, Barry L.; Krishna, N.; Johnson, Manoj; Turner, James A.; Ritzdorf, T.; Wu, G.; Cook, L.

doi:10.1149/1.1390711

Cited by 9 publications

(1 citation statement)

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“…The structure of Cu interconnects is usually patterned by a so-called damascene process [7,8], in which the dielectric layer is patterned in advance, followed by the sequential deposition of a diffusion barrier layer and the filling of the patterned trenches with Cu. The excess of Cu can be removed by a chemical mechanical polishing (CMP) process.…”

Section: Introductionmentioning

confidence: 99%

Recent Advances in Barrier Layer of Cu Interconnects

Tian

Teng

et al. 2020

Materials

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The barrier layer in Cu technology is essential to prevent Cu from diffusing into the dielectric layer at high temperatures; therefore, it must have a high stability and good adhesion to both Cu and the dielectric layer. In the past three decades, tantalum/tantalum nitride (Ta/TaN) has been widely used as an inter-layer to separate the dielectric layer and the Cu. However, to fulfill the demand for continuous down-scaling of the Cu technology node, traditional materials and technical processes are being challenged. Direct electrochemical deposition of Cu on top of Ta/TaN is not realistic, due to its high resistivity. Therefore, pre-deposition of a Cu seed layer by physical vapor deposition (PVD) or chemical vapor deposition (CVD) is necessary, but the non-uniformity of the Cu seed layer has a devastating effect on the defect-free fill of modern sub-20 or even sub-10 nm Cu technology nodes. New Cu diffusion barrier materials having ultra-thin size, high resistivity and stability are needed for the successful super-fill of trenches at the nanometer scale. In this review, we briefly summarize recent advances in the development of Cu diffusion-proof materials, including metals, metal alloys, self-assembled molecular layers (SAMs), two-dimensional (2D) materials and high-entropy alloys (HEAs). Also, challenges are highlighted and future research directions are suggested.

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Section: Introductionmentioning

confidence: 99%