Dual Floating Gate Unified Memory MOSFET With Simultaneous Dynamic and Non-Volatile Operation

AlGaN/GaN‐Based Optoelectronic Synaptic Devices for Neuromorphic Computing

“…Driven by the built‐in electric field, the photogenerated electrons in GaN enter the barrier layer and the SiN x layer by Fowler–Nordheim tunneling and are trapped by the defects in SiN x and the barrier. [ 25 ] In order to further confirm the trapping effect of the SiN x layer on photogenerated electrons, the optical and dark transfer characteristics of the synaptic device with and without SiN x layer are shown in Figure S6 (Supporting Information). The difference between the threshold voltages of the device with SiN x layer under light and dark is much larger than that of the device without SiN x layer.…”

Photochromic Dithienylethene Monolayer-Modified Gold Nanoparticles as a Tunable Floating Gate in the Fabrication of Nonvolatile Organic Memory

“…For the memory operation, the hysteresis windows of the transfer characteristic should be minimized for sweep mode even after the charges are trapped in the trapping layer. 19,20 The hysteresis window is related to the quality of the semiconductor/insulator interface and the bulk traps in the semiconductor layer underneath, which can transiently trap charges. 21−24 However, some organic transistor-based memory reports revealed an enlarged hysteresis window with varying gate voltage sweeping ranges after executing the charge injection into the trapping sites.…”

“…For the memory operation, the hysteresis windows of the transfer characteristic should be minimized for sweep mode even after the charges are trapped in the trapping layer. , The hysteresis window is related to the quality of the semiconductor/insulator interface and the bulk traps in the semiconductor layer underneath, which can transiently trap charges. − However, some organic transistor-based memory reports revealed an enlarged hysteresis window with varying gate voltage sweeping ranges after executing the charge injection into the trapping sites. ,,, The repeatable transfer characteristic loop indicated that charge capturing (in a forward sweep) and charge ejection (in a reverse sweep) occurred continuously in a single scanning loop. The quantity and location of these trap states are hard to control, and presumably, a leakage path is present for the trapped charges.…”

Demonstration of β-Ga2O3 nonvolatile flash memory for oxide electronics

“…Meanwhile, flash memory devices are a highly scalable alternative that exhibits substantial maturity due to decades of device exploration. 16,17) Furthermore, trapping of electrons in the floating gate (FG) is a promising approach to realize enhancement-mode (E-mode) operation to get normally-OFF transistor operation. [18][19][20] Thus, the development of β-Ga 2 O 3 -based flash memory devices is deemed to play a pivotal role in realizing future oxide electronics for various application fields.…”

“…All of these observations exhibited good agreement with the conventional FG or charge-trap NAND flash memories realized on Si. 17,26) Note that the device |V TH | after the erase operation was observed to be lower than |V TH | of the virgin device indicating the erase operation was unable to remove all the electrons injected into the FG during the program operation. Moreover, improving the erase characteristics by hole injection into the FG is an unlikely case for β-Ga 2 O 3 flash memories.…”