“…In the last decade, photodetectors (PDs) are highly desired for applications in many fields, such as optical communications, health monitoring, target detection, and remote sensing. − The most important application of PDs is as sensing units for a photodetector array (PDA) in an imaging system. − There are two categories of PDA in the perspective of built-in potential: those with built-in potential (e.g., p–n junctions) and those without built-in potential (e.g., metal–semiconductor–metal; MSM). , The monolithic design of an MSM-type structure is suited for two-dimensional array layouts, but the device structure is symmetrical, so there is no built-in potential . The p–n junction-type PD is widely used for PDAs because it has a self-powered characteristic, a high signal-to-noise ratio, and a fast response. , Most PDAs that use a p–n junction use a top-down method to produce the mesa structure for pixel isolation, , but dangling bonds form on the mesa sidewalls after the wet etching process, so there is a large surface leakage current .…”