Dual-gate a—Si:H thin film transistors

Tuan, H.C.; Thompson, Malcolm J.; Johnson, N. M.; Lujan, R.

doi:10.1109/edl.1982.25599

Cited by 68 publications

(14 citation statements)

References 9 publications

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“…It can be seen that the top-gate voltage modulates the threshold voltage of the device. This resembles the operation of Si-based dual-gate transistors, 58 where one gate is used for switching operation of the device (in this case, the back-gate) while the second gate (i.e., top-gate) is used for modulating the threshold voltage.…”

Section: ■ Results and Discussionmentioning

confidence: 99%

Highly Stable Hysteresis-Free Carbon Nanotube Thin-Film Transistors by Fluorocarbon Polymer Encapsulation

Kiriya

Chen

et al. 2014

ACS Appl. Mater. Interfaces

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We report hysteresis-free carbon nanotube thin-film transistors (CNT-TFTs) employing a fluorocarbon polymer (Teflon-AF) as an encapsulation layer. Such fluorocarbon encapsulation improves device uniformity with excellent operation stability in air and even in water. The fluoropolymers possess high hydrophobicity for efficient removal of water molecules from the vicinity of nanotubes, which are known to induce charge trapping. In addition, the strong dipole associated with the carbon−fluorine bonds can provide effective screening of the charge carriers in nanotubes from various trap states in the substrate. We also report on the extended applications of encapsulation with Teflon-AF for the realization of dual-gate CNT-TFTs, where one gate is used to control the threshold voltage and the other to switch the device. The fluorocarbon encapsulation technique presents a promising approach for enhanced device reliability, which is critical for future system-level electronics based on CNTs.

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Section: ■ Results and Discussionmentioning

confidence: 99%

Highly Stable Hysteresis-Free Carbon Nanotube Thin-Film Transistors by Fluorocarbon Polymer Encapsulation

Kiriya

Chen

et al. 2014

ACS Appl. Mater. Interfaces

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“…One of the first dual‐gate thin‐film transistors (DGTFT) was based on CdSe and reported in 1981 by Luo et al15 for use in flat panel displays. In 1982, Tuan et al16 demonstrated an a ‐Si:H based DGTFT, which was reproduced by Kaneko et al in 1992 17. In 2005, the first organic DGTFT, based on pentacene was reported by Cui and Liang 18.…”

Section: Introductionmentioning

confidence: 91%

“…To prevent the back electrode from biasing the a ‐Si:H channel area, an additional back gate can be added to the TFT, which shields the channel,24, 46 as shown in Figure a. As with organic and metal‐oxide DGTFTs, a ‐Si:H DGTFTs can be used to actively set the threshold voltage and thereby increase long term display stability,46 or to provide a higher on‐current as compared to single gate TFTs 16, 17, 47. The higher current reduces the footprint of the transistors, leading to a larger aperture ratio and to the ability to defining smaller pixels yielding a higher resolution 46, 47.…”

Section: Dual‐gate Logic Gates and Integrated Circuitsmentioning

confidence: 99%

Dual‐Gate Thin‐Film Transistors, Integrated Circuits and Sensors

et al. 2011

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The first dual‐gate thin‐film transistor (DGTFT) was reported in 1981 with CdSe as the semiconductor. Other TFT technologies such as a‐Si:H and organic semiconductors have led to additional ways of making DGTFTs. DGTFTs contain a second gate dielectric with a second gate positioned opposite of the first gate. The main advantage is that the threshold voltage can be set as a function of the applied second gate bias. The shift depends on the ratio of the capacitances of the two gate dielectrics. Here we review the fast growing field of DGTFTs. We summarize the reported operational mechanisms, and the application in logic gates and integrated circuits. The second emerging application of DGTFTs is sensitivity enhancement of existing ion‐sensitive field‐effect transistors (ISFET). The reported sensing mechanism is discussed and an outlook is presented.

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“…16 Dual-gate a-Si:H TFTs have also been used in fundamental studies of device parameters such as: semiconductor-gate insulator interface properties and the effects of the drain and source electrode contacts. 17 The top and bottom gates affect the TFT channel conductivity in a similar fashion, thus the dual-gate TFTs have higher on current than the single gate TFTs. A dual-gate TFT structure is also better shielded from the effects of external electric field, and it has been applied to our prototype self-scanned a-Se detector in order to shield the otherwise exposed TFT channel from the electric field in a-Se.…”

Section: Dual-gate Tfts For High Voltage Protectionmentioning

confidence: 99%

Digital radiology using active matrix readout of amorphous selenium: Detectors with high voltage protection

Zhao

Law

Waechter³

et al. 1998

Med. Phys.

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A flat-panel x-ray imaging detector is being investigated for digital radiography and fluoroscopy. The detector uses a layer of amorphous selenium (a-Se) to convert x rays to a charge image, which is then electronically read out with a two-dimensional array of thin film transistors (TFTs). In order to sensitize the a-Se layer to x rays, a high voltage (of the order of several thousand volts) is applied to its top surface. The TFTs, which are at the bottom surface of the a-Se layer, are not subjected to any high voltage under normal radiological operational conditions since the pixel potential is < 10 V. However under a fault condition where these two events occur simultaneously: (1) suspended detector scan; and (2) an x-ray exposure more than ten times higher than normal, the voltage on the TFTs could rise to a damaging value. This paper describes a method for protecting the TFTs from high voltage damage under this fault condition. It employs a dual-gate TFT structure, one gate is for scanning control and the other is connected to the pixel electrode for high voltage protection. Before the pixel potential reaches a damaging value, the protection gate turns on the TFT automatically and drains excess charge away from the pixel thus providing a safe pixel saturation potential. In this paper, the characteristic curves of dual-gate TFTs are studied both theoretically and experimentally. The pixel x-ray response for imaging detectors with high voltage protection are predicted, and it is shown that with practical TFT designs the detector can provide a safe pixel saturation potential as well as satisfy the dynamic range required for diagnostic x-ray imaging applications.

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Dual-gate a—Si:H thin film transistors

Cited by 68 publications

References 9 publications

Highly Stable Hysteresis-Free Carbon Nanotube Thin-Film Transistors by Fluorocarbon Polymer Encapsulation

Highly Stable Hysteresis-Free Carbon Nanotube Thin-Film Transistors by Fluorocarbon Polymer Encapsulation

Dual‐Gate Thin‐Film Transistors, Integrated Circuits and Sensors

Digital radiology using active matrix readout of amorphous selenium: Detectors with high voltage protection

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