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A short H2 plasma treatment of the gate SiNx before depositing amorphous silicon (a-Si:H) is found to significantly decrease the threshold shifts in the bias stress, inverted a-Si:H thin film transistors (TFTs). The reduced threshold voltage shift is attributed to a plasma induced reconstruction of SiNx precursors leading to the removal of the weak bonds. A prolonged plasma treatment, however, degraded the TFT characteristics; this was traced H2 plasma damage which eventually generated a rough a-Si:H/SiNx interface.

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In this paper, the amorphous silicon thin film transistor (a-Si:HTFT) technology is reviewed. Its applications to both one- and two-dimensional large-area devices are described. The issues related to the fabrication of TFT arrays on large-area substrates are also discussed.