Single-crystal silicon transistors in laser-crystallized thin films on bulk glass

Johnson, N. M.; Biegelsen, D. K.; Tuan, H.C.; Moyer, M. D.; Fennell, L. E.

doi:10.1109/edl.1982.25603

Cited by 36 publications

(8 citation statements)

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“…First, attempts to develop such a substrate via other means, which are also based on the hydrogen-ion implantation of silicon followed by thermal bonding to glass, present problems such as the contamination of the silicon by the elements in the glass via diffusion at the high process temperatures encountered during the fabrication of thin-film transistors. 3,4,12,13 This situation necessitates the deposition of a barrier film on the glass to prevent the diffusion of mobile species. Such a deposited film, typically silicon-oxynitride deposited via plasma-enhanced chemical vapor deposition, inherently contains many defects that act as charge trapping centers.…”

Section: Methodsmentioning

confidence: 99%

“…Unfortunately, all of these technologies exhibit significant TFT performance variation, and they additionally have limited performance and functionality. [1][2][3][4][5] Corning Incorporated has developed a new SiOG substrate that consists of a high-quality crystalline silicon layer on industry-standard EAGLE 2000 glass using a process that is compatible with flatpanel display manufacturing. The substrate targets the small-format portable display market.…”

mentioning

confidence: 99%

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Reduction of Hot Carrier Effects in Silicon-on-Glass TFTs

Mativenga

Choi

et al. 2011

J. Electrochem. Soc.

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Hot carrier (HC) instability of thin-film transistors (TFTs) fabricated on single-crystal,silicon-on-glass (SiOG) substrates is studied. The formation of the SiOG substrate is achieved by the transfer of a single-crystal silicon film to a display-glass substrate. The transfer process creates an in-situ barrier layer free of mobile ions in the glass adjacent the silicon film. The n- and p-channel TFT transfer characteristics typically exhibit excellent on-state performance with gate voltage swing values of 180 mV/decade, electron and hole mobilities of ∼ 251 and 201 cm2/V·s respectively, and threshold voltages of approximately −0.3 and −1.2 V for the n- and p-channel TFT’s respectively. While p-channel TFTs exhibit good stability, on-current degradation is observed in the transfer characteristics of the n-channel TFT. The degradation is due to HC stress. In this study, the integration of a lightly doped drain (LDD) structure in the n-channel SiOG TFTs to minimize HC instability is reported. The LDD design incorporates 2 μm offset regions. The offset regions are lightly doped (n-) with phosphorus ions implanted at 10 keV. N-levels of ∼ 1 × 1013, 2 × 1013, and 3 × 1013 cm−2 are analyzed to determine the optimum doping conditions that reduce HC instability while minimizing degradation in the on-state device performance.

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Section: Methodsmentioning

confidence: 99%

mentioning

confidence: 99%

Reduction of Hot Carrier Effects in Silicon-on-Glass TFTs

Mativenga

Choi

et al. 2011

J. Electrochem. Soc.

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“…Many special applications such as communication, military and space systems required these devices to be operated in laser environment, where it becomes important to understand their laser damage processes. A great deal is known about the structural and electrical properties of laser-recrystallized polysilicon films [1,21. Laser recrystallization has been successfully used to achieve three-dimensional integration of MOSFETs [3] and diodes [4]. Related work has investigated degradation of carrier lifetimes in Si substrates after pulsed laser irradiation of overlaying polysilicon films [5,6].…”

Section: Introductionmentioning

confidence: 99%

<title>Transient laser-induced surface deformation of Si-based multilayer structures</title>

Chun

Walser

et al. 1993

SPIE Proceedings

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Transient thermal expansion, heat generation and conduction, nonlinear laser heating and subsequent melting behaviors of polysificon/oxide/silicon wafer 'sandwich' structures have been investigated via a laser pump-probe technique. Laser pmcessing, damage, and characterization of bulk semiconductor materials has been extensively investigated. However, less is known about the mechanisms of laser-induced damage for multilayer structures such as CCD imaging arrays. In order to develop damage resistant sensors and better isolation for sensors used in laser environments, it is necessary to understand the processes contributing to the laser hardness and damage of these sensors. We designed experiments to measure the transient thermomechanical and laser-damage characteristics of multilayer systems that resemble CCD devices. The final objective was to gain some insight into the dominant mechanisms responsible for laser-induced degradation in CCD imaging arrays and devices of similar structures. Positive identification of a precursor event signaling the onset of catastrophic damage and identification of the weakest link elements on the sensor array will be essential for making design or processing modifications to improve hardness. It is our goal in this paper to contribute to the above objectives by describing investigations of laser-induced damage to silicon-based multilayer structures. We performed single and multiple shot experiments to obtain morphological damage thresholds for a sample set of various isolation oxide and polysilicon layer thickness. The transient photothermal deflection (TPD) technique that we employed consisted of a 10 ns pulsed Nd: YAG pump laser source at 1064 nm wavelength with a 10 Hz repetition rate. A cw HeNe laser was to probe the localized, timedependent slope change of the illuminated surface. The deflection of the reflected probe beam was detected by a fast bicell photodiode with temporal resolution of 20 ns. The deformation signals were recorded by a digital camera system and highspeed oscilloscope. The waveforms were later analyzed to extract the peak angular deflection and the vertical displacement based on the geometry of the Gaussian irradiation profile. Vertical displacement down to a few nm could be detected. Measured displacement and surface temperature were then compared to computer simulations at different fluence levels for bulk silicon. They were found to be in excellent agreement to each other. In addition, single shot experiments were performed to obtain their respective damage onsets for various Si-based multilayer samples. Results indicated that the top polysilicon layer received the major portion of the photon energy deposited before substantial heat was conducted into the Si substrate. And it had a lower melt onset than bulk silicon due to strong nonlinear absorption. Laser-induced damage to polysilicon layer was also related to film microstructures and degree of thermal isolation which depended on the oxide thickness. Measurement of peak surface deformation at subthresho...

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“…[6][7][8][9][10][11][12][13][14][15][16] A Si metal-oxide-semiconductor (MOS) fieldeffect transistor (FET) formed on a CW-laser crystallized SOI substrate showed field-effect mobility similar to that of a bulk Si-MOSFET. [6][7][8][9][10][11][12][13][14][15][16] Our group recently used a frequency-doubled (2!) diodepumped solid-state (DPSS) Nd:YVO 4 CW laser ( ¼ 532 nm) to form large grains on a 300 mm Â 300 mm nonalkali glass substrate and obtained high-performance TFTs having a field-effect mobility above 500 cm 2 /Vs.…”

Section: Introductionmentioning

confidence: 99%

Selective Single-Crystalline-Silicon Growth at the Pre-defined Active Region of a Thin Film Transistor on Glass by Using Continuous Wave Laser Irradiation

Hara

Yoshino

Takeuchi

et al. 2003

Jpn. J. Appl. Phys.

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We have developed a new silicon (Si) crystallization method that makes it possible to form single-crystalline Si in the channel regions of thin-film transistors (TFTs) on non-alkali glass without introducing thermal damage. The method includes using a frequency-doubled (2!) diode-pumped solid-state (DPSS) Nd:YVO 4 continuous-wave (CW) laser ( ¼ 532 nm). The unique characteristics of this crystallization method are the introduction of a pre-defined thick capping-Si layer on a pre-patterned channel region and laser irradiation from the back surface through the glass substrate. We succeeded in forming 2-mm-wide and 20-mm-long single-crystalline Si in the channel region of a TFT. A high-performance n-channel TFT on a glass substrate was obtained using a 450 C fabrication process. The TFT had a field-effect mobility of 400 cm 2 /Vs, a subthreshold swing of 0.16 V/dec, and a threshold voltage of 0.24 V.

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Single-crystal silicon transistors in laser-crystallized thin films on bulk glass

Cited by 36 publications

References 0 publications

Reduction of Hot Carrier Effects in Silicon-on-Glass TFTs

Reduction of Hot Carrier Effects in Silicon-on-Glass TFTs

<title>Transient laser-induced surface deformation of Si-based multilayer structures</title>

Selective Single-Crystalline-Silicon Growth at the Pre-defined Active Region of a Thin Film Transistor on Glass by Using Continuous Wave Laser Irradiation

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