Reduction of charge injection into PECVD SiNxHy by control of deposition chemistry

Plasma diagnostics and device properties of AlGaN/GaN HEMT passivated with SiN deposited by plasma-enhanced chemical vapour deposition

“…Plasma diagnostic, allowing to identify transient species, as well as stable products and other properties involved in plasma processing, has become a powerful method to understand the mechanisms which ultimately lead to the growth of films of the most diverse characteristics [19][20][21]. The diagnostic is mainly carried out with spectroscopic techniques like visible emission of excited species [6,[22][23][24][25] or infrared absorption of molecular bands [7,[26][27][28][29][30]; by mass spectrometry of neutrals [1][2][3]6,31,32] and ions [33][34][35], and with Langmuir probes [36,37].…”

“…Smith and co-workers [1][2][3] studied SiH 4 + NH 3 and SiH 4 + N 2 plasmas generated in a parallel plate RF plasma reactor; characterized the plasmas by means of line-of-sight mass spectrometry, and studied the plasma composition for various plasma powers and gas mixture conditions, with the aim of minimizing the rate of charge trapping in Al/Si x N y H z /Si Metal-Insulating-Semiconductor (MIS) capacitors. They also found that in the case of SiH 4 + NH 3 plasmas, the main deposition precursor was the triaminosilane (Si(NH 2 ) 3 ) radical [1], whereas in the case of SiH 4 + N 2 plasmas, SiH n radicals and N atoms react directly at the substrate surface [2].…”

“…Silicon nitride (SiN) thin films deposited by plasma-enhanced chemical vapour deposition (PECVD) are widely used in the semiconductor industry as passivating layer [1][2][3], diffusion barrier [4], gate dielectric [5,6] or interlevel metal isolation. They are also currently employed as antireflection and protective coatings in solar cells [7,8], and have been investigated to fabricate membranes for micromechanical applications [9].…”

“…The hydrogen content, which is determinant in the film characteristics, is higher when NH 3 is used as a precursor. Nevertheless, this molecule can be dissociated much more efficiently at electron energies remarkably lower than those needed to dissociate N 2 [3,6] and therefore is more widely used. To drive out the excess of hydrogen, substrate temperatures ∼300 • C or higher are usually employed during deposition processes.…”

Estudo e fabricação de capacitores MOS com camada isolante de SiOxNy depositada por PECVD.

“…SMITH et.al. [43] publicou que em processos de Pode-se observar na Fig. 5.1(a), que a densidade de estados de interface dos capacitores deste trabalho, manteve-se na faixa de 4,55.10 10 a 8.10 12 eV -1 .…”