Plasma diagnostics and device properties of AlGaN/GaN HEMT passivated with SiN deposited by plasma-enhanced chemical vapour deposition

Romero, M. F.; Sanz, M. M.; Tanarro, Isabel; Jiménez, Antonio; Muñoz, E.

doi:10.1088/0022-3727/43/49/495202

Cited by 7 publications

(4 citation statements)

References 46 publications

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“…[20][21][22][23] These works exemplify the complexity of the chemistry involved in film deposition and the necessity of getting further insight into the underlying mechanisms, since the properties of the films are correlated with the plasma composition and conditions 20 and have effects on the properties of the devices where these films are deposited. 24 In nuclear fusion research, the interest is focused on the inhibition of film deposition. 25 High fluxes of hydrogen isotopes produce chemical sputtering of carbon-based materials, which leads to the formation of re-deposited (a-C:H) carbon films in regions not directly exposed to plasma.…”

Section: And 6 and References Therein)mentioning

confidence: 99%

Neutral and ion chemistry in low pressure dc plasmas of H2/N2 mixtures: routes for the efficient production of NH3 and NH4+

Carrasco

Jiménez-Redondo

Tanarro

et al. 2011

Phys. Chem. Chem. Phys.

128

240

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The chemistry in low pressure (0.8-8 Pa) plasmas of H(2) + 10% N(2) mixtures has been experimentally investigated in a hollow cathode dc reactor using electrical probes for the estimation of electron temperatures and densities, and mass spectrometry to determine the concentration of ions and stable neutral species. The analysis of the measurements by means of a kinetic model has allowed the identification of the main physicochemical mechanisms responsible for the observed distributions of neutrals and ions and for their evolution with discharge pressure. The chemistry of neutral species is dominated by the formation of appreciable amounts of NH(3) at the metallic walls of the reactor through the successive hydrogenation of atomic nitrogen and nitrogen containing radicals. Both Eley-Rideal and Langmuir-Hinshelwood mechanisms are needed in the chain of hydrogenation steps in order to account satisfactorily for the observed ammonia concentrations, which, in the steady state, are found to reach values ~30-70% of those of N(2). The ionic composition of the plasma, which is entirely due to gas-phase processes, is the result of a competition between direct electron impact dissociation, more relevant for high electron temperatures (lower pressures), and ion-molecule chemistry that prevails for the lower electron temperatures (higher pressures). At the lowest pressure, products from the protonation of the precursor molecules (H(3)(+), N(2)H(+) and NH(4)(+)) and others from direct ionization (H(2)(+) and NH(3)(+)) are found in comparable amounts. At the higher pressures, the ionic distribution is largely dominated by ammonium. It is found that collisions of H(3)(+), NH(3)(+) and N(2)H(+) with the minor neutral component NH(3) are to a great extent responsible for the final prevalence of NH(4)(+).

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Section: And 6 and References Therein)mentioning

confidence: 99%

Neutral and ion chemistry in low pressure dc plasmas of H2/N2 mixtures: routes for the efficient production of NH3 and NH4+

Carrasco

Jiménez-Redondo

Tanarro

et al. 2011

Phys. Chem. Chem. Phys.

128

240

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“…It is found that the interface trap states are greatly suppressed. SiN x has almost twice dielectric constant to SiO 2 , excellent thermal stability, and electronic insulating properties, which has been utilized in the AlGaN/GaN HEMT MISFETs to reduce interface state density and increase threshold voltage stability [12][13][14]. By introducing SiN x as the gate dielectric for p-GaN MIS capacitor, a high-quality and highly stable interface with low-density interface states and trapping states was developed with an effective two-step surface treatments from both electrical and microstructural invest igation.…”

Section: Introductionmentioning

confidence: 99%

High-quality SiN_x/p-GaN metal-insulator-semiconductor interface with low-density trap states

Ren

Liao

Sumiya

et al. 2018

J. Phys. D: Appl. Phys.

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We report on a high-quality p-GaN metal-insulator-semiconductor (MIS) capacitors with sharp interface morphology and the lowest interface trap density by using SiNx as the gate dielectric layer. Transmission electron microscopy and x-ray photoelectron spectroscopy (XPS) analysis revealed a high-quality interface morphology with the effective removal of carbon and oxygen impurities. Better than the interface properties of Al2O3, SiO2, and CaF2/p-GaN metal-oxide-semiconductor (MOS) or MIS capacitors, the capacitance-voltage measurements of SiNx/p-GaN showed negligible electrical hysteresis after a two-step surface pre-treatment, leading to the lowest trapped charge density of 5 × 1010 cm−2. The interface state density distribution was also reduced to be ~1–2 × 1012 cm−2 · eV−1 at Et–Ev = 0.2–0.45 eV and 3–5 × 1012 cm−2 · eV−1 near the valance-band edge after the treatments. The achievement of the high-quality MIS interface was attributed to the suppression of the Mg-Ga-O interfacial disordered layer by the effective surface treatments and oxygen-free deposition process, which was usually observed at Al2O3/p-GaN MOS interface.

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“…When SiN layer has a dense structure, hydrogen from the SiN film cannot be able to diffuse through the film and replace the lost hydrogen at the interface. Garcia et al [11] and Romero et al [12] found a linear relationship between the N-H bond density and the minimum interface trap density (D it ). A large proportion of works focus on the effect of SiN film composition on the passivation characteristic of metal/SiN/Si structure and scarce research [13,14] on the Schottky characteristic in GaN HEMTs with SiN layer.…”

Section: Introductionmentioning

confidence: 99%

Effect of SiN:H _x passivation layer on the reverse gate leakage current in GaN HEMTs

Zhang

Xiao

et al. 2018

Chinese Phys. B

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This paper concentrates on the impact of SiN passivation layer deposited by plasma-enhanced chemical vapor deposition (PECVD) on the Schottky characteristics in GaN high electron mobility transistors (HEMTs). Three types of SiN layers with different deposition conditions were deposited on GaN HEMTs. Atomic force microscope (AFM), capacitancevoltage (C-V ), and Fourier transform infrared (FTIR) measurement were used to analyze the surface morphology, the electrical characterization, and the chemical bonding of SiN thin films, respectively. The better surface morphology was achieved from the device with lower gate leakage current. The fixed positive charge Q f was extracted from C-V curves of Al/SiN/Si structures and quite different density of trap states (in the order of magnitude of 10 11 -10 12 cm −2 ) was observed. It was found that the least trap states were in accordance with the lowest gate leakage current. Furthermore, the chemical bonds and the %H in Si-H and N-H were figured from FTIR measurement, demonstrating an increase in the density of Q f with the increasing %H in N-H. It reveals that the effect of SiN passivation can be improved in GaN-based HEMTs by modulating %H in Si-H and N-H, thus achieving a better Schottky characteristics.

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Plasma diagnostics and device properties of AlGaN/GaN HEMT passivated with SiN deposited by plasma-enhanced chemical vapour deposition

Cited by 7 publications

References 46 publications

Neutral and ion chemistry in low pressure dc plasmas of H2/N2 mixtures: routes for the efficient production of NH3 and NH4+

Neutral and ion chemistry in low pressure dc plasmas of H2/N2 mixtures: routes for the efficient production of NH3 and NH4+

High-quality SiN_x/p-GaN metal-insulator-semiconductor interface with low-density trap states

Effect of SiN:H _x passivation layer on the reverse gate leakage current in GaN HEMTs

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Plasma diagnostics and device properties of AlGaN/GaN HEMT passivated with SiN deposited by plasma-enhanced chemical vapour deposition

Cited by 7 publications

References 46 publications

Neutral and ion chemistry in low pressure dc plasmas of H2/N2 mixtures: routes for the efficient production of NH3 and NH4+

Neutral and ion chemistry in low pressure dc plasmas of H2/N2 mixtures: routes for the efficient production of NH3 and NH4+

High-quality SiN x /p-GaN metal-insulator-semiconductor interface with low-density trap states

Effect of SiN:H x passivation layer on the reverse gate leakage current in GaN HEMTs

Contact Info

Product

Resources

About

High-quality SiN_x/p-GaN metal-insulator-semiconductor interface with low-density trap states

Effect of SiN:H _x passivation layer on the reverse gate leakage current in GaN HEMTs