Dual-injection sub-harmonic injection-locked frequency tripler

Chen, Changchun; Wu, Janne-Wha; Chiao, Te-Feng

doi:10.1109/apmc.2012.6421873

Cited by 8 publications

(2 citation statements)

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“…[10], high dc power consumption is usually required. Compared to this work, References [12,13] have a similar operating frequency and power consumption, but a smaller locking range. This work demonstrates a wide locking range and low DC power and is suitable for K-band application.…”

Section: Measured Results and Discussionmentioning

confidence: 83%

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A wide locking range and low DC power injection-locked frequency tripler for K-band application

Zhou¹,

Li²,

Li³

et al. 2014

J. Semicond.

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This paper presents a wide locking range and low DC power injection-locked frequency tripler for K-band frequency synthesizers application. The proposed ILFT employs a variable current source to decouple the injection signal path and the bias current so that the third harmonic of the injection signal can be maximized to enlarge the locking range. Meanwhile, a 2-bit digital control capacity array is used to further increase the output frequency locking range. It is implemented in a 130-nm CMOS process and occupies a chip area of 0.7 × 0.8 mm2 without pads. The measured results show that the proposed ILFT can achieve a whole locking range from 18 to 21 GHz under the input signal of 4 dBm and the core circuit dissipates only 4 mW of DC power from a 0.8 V supply voltage. The measured phase noise degradation from that of the injection signal is only 10 dB at 1 MHz offset.

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Section: Measured Results and Discussionmentioning

confidence: 83%

“…[12] Ref. [13] This the injection signal is big, the conduction is drifted away from the optimum value so as to decrease the injection efficiency. Thus, the injection-locking range is almost saturated when the input injection power is bigger than 4 dBm.…”

Section: Measured Results and Discussionmentioning

confidence: 99%

A wide locking range and low DC power injection-locked frequency tripler for K-band application

Zhou¹,

Li²,

Li³

et al. 2014

J. Semicond.

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V-band CMOS injection-locked frequency tripler using differential harmonic current injection technique

Chang

2021

Analog Integr Circ Sig Process

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This letter presents a V-band CMOS injection-locked frequency tripler (ILFT) fabricated in a standard 90-nm CMOS process. By employing a differential harmonic current injection technique, a frequency doubler (2f 0 ) realized in the connected source terminal of injection transistors is to mix with injection signals (f 0 ) through injection transistors, and output signals (3f 0 = 2f 0 ? f 0 ) are obtained from output buffers. The proposed ILFT improves the locking range and power dissipation by adopting two cross-coupled transistor pairs, and strengthens the rejection ability of second-order harmonic by using a resonator network. The proposed ILFT has the free-running frequency of 62.49 GHz and locking ranges of 61.2 to 64.2 GHz as input injection signals from 20.4 to 21.4 GHz at an input power level of 0 dBm. The proposed ILFT core consumes 7.48 mW from a supply voltage of 1.1 V.

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