Dual interfacial modifications by conjugated small-molecules and lanthanides doping for full functional perovskite solar cells

Chen, Cong; Liu, Dali; Wu, Yanjie; Bi, Wenbo; Sun, Xueke; Chen, Xu; Liu, Wei; Xu, Lin; Song, Hongwei; Dai, Qilin

doi:10.1016/j.nanoen.2018.09.037

Cited by 62 publications

(53 citation statements)

References 82 publications

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“…To explore the carrier recombination in perovskite films, the light intensity‐dependent V oc of PSCs was performed, as displayed in Figure 4b. The V oc depends logarithmically on the light intensity and the ideality factor n is expressed as a factor in the following equation [ 30 ]

\begin{matrix} δ V_{oc} = n (k_{B} T / e) \ln (I) + constant \end{matrix}

where I represents the light intensity, T represents temperature, e represents elementary charge, and k B represents the Boltzmann constant. n ( k B T / e ) is usually associated with the recombination process affected by trap states in optoelectronic devices.…”

Section: Resultsmentioning

confidence: 99%

Incorporating of Lanthanides Ions into Perovskite Film for Efficient and Stable Perovskite Solar Cells

Song

et al. 2020

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Since Yan's work, incorporation of some lanthanide elements, such as Eu and Nd, into MAPbI3 layer has been proven to be a powerful strategy on improving the permanence of the perovskite solar cells (PSCs). However, a comprehensive configuration has not been given for different lanthanide elements doping while the mechanism has not been clarified. Herein, the incorporation of various lanthanides ions (Ln3+ = Ce3+, Eu3+, Nd3+, Sm3+, or Yb3+) into perovskite films to largely enhance the performance of PSCs is presented. Arising from the enlarged grain size and crystallinity of perovskite film upon Ln3+ ions doping, the efficiency and stability of PSCs are significantly improved. Extraordinarily, PSCs with Ce3+ doping achieve the best performance, with a champion power conversion efficiency (PCE) of 21.67% in contrast to 18.50% for pristine PSCs, and outstanding long‐term and UV irradiation stability. Such high performance of PSCs after Ce3+ doping originates from special Ce3+/Ce4+ redox pair and the unique 4f‐5d absorption in the UV region. Finally, the flexible PSCs with low‐temperature preparation are explored. Considering the richer deposition of cerium element in the earth and lower price, the findings may provide new opportunities for developing low‐cost, highly efficient, air/UV stable, and flexible PSCs.

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\begin{matrix} δ V_{oc} = n (k_{B} T / e) \ln (I) + constant \end{matrix}

Section: Resultsmentioning

confidence: 99%

Incorporating of Lanthanides Ions into Perovskite Film for Efficient and Stable Perovskite Solar Cells

Song

et al. 2020

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“…Recently, research results indicate that vacuum deposition methods, such as atomic layer deposition, magnetron sputtering, and PLD, can produce high-quality thin films compared to spin coating method, leading to increased device performance of PSCs. [35][36][37][38] The films fabricated by spin coating method have more pinholes and defects. To overcome such problems, the PLD method is used to fabricate high-quality am-ZTO films.…”

Section: Resultsmentioning

confidence: 99%

Improved Interface Charge Extraction by Double Electron Transport Layers for High‐Efficient Planar Perovskite Solar Cells

Gao

Liu

et al. 2019

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Charge extraction by electron transport layers (ETLs) plays a vital role in improving the performance of perovskite solar cells (PSCs). Here, PSCs with four different types of ETLs, such as SnO 2 , amorphous-Zn 2 SnO 4 (am-ZTO), am-ZTO/SnO 2 , and SnO 2 /am-ZTO, are successfully synthesized. The interface recombination behavior and the charge transport properties of the devices affected by four types of ETLs are systematically investigated. For dual am-ZTO/SnO 2 ETLs, compact am-ZTO ETL prepared by the pulsed laser deposition method provides a dense physical contact with FTO than the spin coating films, decreasing leakage current and improving charge collection at the interface of ETL/FTO. Moreover, dual am-ZTO/SnO 2 ETLs lead to large free energy difference (ΔG), improving electron injection from perovskite to ETLs. One additional electron pathway from perovskite to am-ZTO is formed, which can also improve electron injection efficiency. A power conversion efficiency of 20.04% and a stabilized efficiency of 19.17% are achieved for the device based on dual am-ZTO/SnO 2 ETLs. Most importantly, the devices are fabricated at a low temperature of 150 C, which offers a potential method for large-scale production of PSCs, and paves the way for the development of flexible PSCs. It is believed that this work provides a strategy to design ETLs via controlling ΔG and interface contact to improve the performance of PSCs.

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“…The resistance UV ability of the device doped with Er 3+ was significantly enhanced. The PCE of Er 3+ ‐doped TiO 2 ‐based PSCs can still maintain more than 90% after UV irradiation of 500 h. Remarkably, our group [ 222 ] explored the Y 3+ , La 3+ , Ce 3+ , Nd 3+ , Sm 3+ , Gd 3+ , and (ytterbium) Yb 3+ ‐, (thulium) Tm 3+ ‐, (lutetium) Lu 3+ ‐doped TiO 2 and their influence on the photoelectric performance (Figure 14g,h). The results indicated that the average PCE of devices from Y 3+ to Lu 3+ doping in TiO 2 would decrease from 19.5% to 18.4%.…”

Section: Doping Of Semiconductor Oxides Etlsmentioning

confidence: 91%

Doping in Semiconductor Oxides‐Based Electron Transport Materials for Perovskite Solar Cells Application

et al. 2021

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From the perspective of the device structure of perovskite solar cells (PSCs), the electron transport layer is one of the essential components and plays a significant role in suppressing carrier recombination. Furthermore, its decisiveness is related to the quality of perovskite film, the rapid interface carrier extraction, and the bandgap alignment. However, the deficiency of the semiconductor oxides based electron transport materials, especially for most studied TiO2, is that their carrier mobility is one to three orders of magnitude lower than the most commonly used hole transport materials, leading to an imbalanced carrier flux and unpredicted hysteresis. Doping new ions are the most effective ways to improve electron mobility and tune the bandgap, while the fundamental mechanism of doping in the majority of cases are still lacking. Herein, the doping effect on semiconductor oxides is reviewed and emphasized by classifying the doping ions according to the critical factors of lattice optimization, a carrier transporting improvement, and interface modification. This review is the first systematic summary of the ion doping characteristics in oxide electron transport layers of PSCs. Finally, the implementation of doping ions in electron transport materials is briefly discussed for further enhancing the photovoltaic performance of PSCs.

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Dual interfacial modifications by conjugated small-molecules and lanthanides doping for full functional perovskite solar cells

Cited by 62 publications

References 82 publications

Incorporating of Lanthanides Ions into Perovskite Film for Efficient and Stable Perovskite Solar Cells

Incorporating of Lanthanides Ions into Perovskite Film for Efficient and Stable Perovskite Solar Cells

Improved Interface Charge Extraction by Double Electron Transport Layers for High‐Efficient Planar Perovskite Solar Cells

Doping in Semiconductor Oxides‐Based Electron Transport Materials for Perovskite Solar Cells Application

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