Dual Material Double-Layer Gate Stack SON MOSFET: A Novel Architecture for Enhanced Analog Performance—Part I: Impact of Gate Metal Workfunction Engineering

Kasturi, Poonam; Saxena, Manoj; Gupta, Mridula; Gupta, Radha

doi:10.1109/ted.2007.910564

Cited by 43 publications

(5 citation statements)

References 42 publications

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“…Modification of the electric field distribution under the gate region can improve the electron velocity profile and hence the device transconductance. One approach to improve the device transconductance and suppress DIBL of the lateral HEMTs is to employ a dual metal gate (DMG) structure with different metal work functions (WF) [9][10][11]. Simulations of GaN-based HEMT devices using this structure have been performed previously [12,13] showing notable improvements in the electron velocity under the gate leading to a higher output current and transconductance as well as suppression in the DIBL in these devices [14].…”

Section: Introductionmentioning

confidence: 99%

Dual metal gate AlGaN/GaN high electron mobility transistors with improved transconductance and reduced short channel effects

Pinchbeck

Lee

Jiang

et al. 2020

J. Phys. D: Appl. Phys.

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AlGaN/GaN high electron mobility transistors with a range of dual metal gate (DMG) lengths have been fabricated and studied. An improvement in transconductance up to 9% has been measured in the DMG devices in comparison to the conventional single metal gate devices. This is attributed to the distribution of the electric field under the gate region as a result of two gate metals. The drain induced barrier lowering is also suppressed using the sub-µm DMG devices, with a drain induced barrier lowering decrease of around 50% due to a potential shielding effect in the two-dimensional electron gas channel.

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Section: Introductionmentioning

confidence: 99%

Dual metal gate AlGaN/GaN high electron mobility transistors with improved transconductance and reduced short channel effects

Pinchbeck

Lee

Jiang

et al. 2020

J. Phys. D: Appl. Phys.

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“…This nonuniform distribution of the drift velocity of electron across the channel results significantly high drain conductance and high channel length modulation in short channel MOSFET devices. Although the Double Gate structure provides an effective mean of suppressing the short channel effects but it does not provide any significant improvement in electron transport efficiency over conventional single gate MOSFET structure [2]- [4]. This work presents a novel Dual Insulator architecture which can be provided as a possible solution to improve the poor electron transport efficiency of DG MOSFET device.…”

Section: Introductionmentioning

confidence: 99%

TCAD assessment of nonconventional Dual Insulator Double Gate MOSFET

Yadav

Srivastava

Rahul

et al. 2012

2012 International Conference on Devices, Circuits and Systems (ICDCS)

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In the present work we have introduced generic new type of Double Gate Metal Oxide Semiconductor Field Effect Transistor (DG MOSFET), with Dual Insulator (01) architecture. The gate insulator of the Dual Insulator Double Gate (DIDG) MOSFET consists of two laterally placed insulator materials with different dielectric constants. This novel gate insulator structure takes advantage of difference of dielectric constants in such a way that the threshold voltage near the source is more positive than that near the drain (for n-channel DIDG MOSFET, opposite for p-channel DIDG MOSFET), resulting in a more rapid acceleration of charge carriers in the channel near the source and a screening effect near drain region of channel due to which device shows significant suppression in the drain conductance and a higher drain current than conventional Double Gate MOSFET.

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“…It is observed that the novel DMG device has marginally better SS compared with classical DMG DGJLT due to the improved subthreshold characteristics. However, the SMG devices have slightly lower SS than DMG devices [28,29].…”

Section: Resultsmentioning

confidence: 90%

Improved performance of nanoscale junctionless transistor based on gate engineering approach

Wang

Shan

Dou

et al. 2015

Microelectronics Reliability

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Dual Material Double-Layer Gate Stack SON MOSFET: A Novel Architecture for Enhanced Analog Performance—Part I: Impact of Gate Metal Workfunction Engineering

Cited by 43 publications

References 42 publications

Dual metal gate AlGaN/GaN high electron mobility transistors with improved transconductance and reduced short channel effects

Dual metal gate AlGaN/GaN high electron mobility transistors with improved transconductance and reduced short channel effects

TCAD assessment of nonconventional Dual Insulator Double Gate MOSFET

Improved performance of nanoscale junctionless transistor based on gate engineering approach

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