Dual Modification Engineering via Lanthanide‐Based Halide Quantum Dots and Black Phosphorus Enabled Efficient Perovskite Solar Cells with High Open‐Voltage of 1.235 V

Abstract

Interfacial engineering is one of the most effective means to improve the photoelectric conversion efficiency (PCE) and stability of perovskite solar cells (PSCs). In this work, Ln3+‐based halide Cs3TbCl6 quantum dots (QDs) are synthesized through a modified hot‐injection method, which displays an excitonic emission centered at 431 nm and the characteristic emission peaks of Tb3+ ions. Then, the Ln3+‐based halide Cs3TbCl6 QDs are introduced to the interface of Cs0.05(FA0.83MA0.17)0.95Pb(I0.83Br0.17)3 perovskite films in the PSCs, which can regulate the energy levels, fill the grain boundaries and remove the ionic defects. Surprisingly, the Cs3TbCl6 QDs modified devices achieve a champion PCE of 22.89% with a super high open‐voltage of 1.235 V. The high open‐voltage can be mainly attributed to the better bandgap alignment, enhanced interface, and reduced defects density. Afterward, the hole transport layer (HTL) is modified by the black phosphorus QDs (BPQDs), yielding a champion PCE of 23.49% and a filling factor of 80.32%. The Cs3TbCl6 QDs modified unencapsulated device possesses well environmental stability and humidity stability. This work demonstrates a new kind of Ln3+‐based metal QDs and explores a new approach to fabricate the PSCs with high open‐voltage, high efficiency, and good stability through the QD‐based passivation techniques.

Dual-layer synergetic optimization of high-efficiency planar perovskite solar cells using nitrogen-rich nitrogen carbide as an additive

“…3g, the XPS signal peak of the Pb 4f orbital in the perovskite@g-C 3 N 5 lm displays a slight negative shi compared to the pristine perovskite lm, demonstrating that the lone pair electrons from N in g-C 3 N 5 can interact with uncoordinated Pb 2+ to passivate defects and inhibit ion migration. 41,42 Furthermore, since there is no signicant binding effect, no change in the core-level I 3d peak is observed (Fig. S10 †).…”

Highly‐Sensitive, Stable, and Fast‐Response Lead‐Free Cs2AgBiBr6 Double Perovskite Photodetectors Enabled by Synergistic Engineering of Doping Na+/Ce3+ and Integrating Ag Nanoparticles Film

“…The larger Rrec was found in Cs 2 AgBiBr 6 :Na + ,Ce 3+ based device compared to other devices, which is beneficial to resist the charge recombination. [52] To further verify the mechanism of improved electrical performance, the ions migration properties of perovskite films were investigated using temperature-conductivity curves (Figure 3g; Note S4, Supporting Information). The activation energy (E a ) of Cs 2 AgBiBr 6 , Cs 2 AgBiBr 6 :Na + , Cs 2 AgBiBr 6 : Ce 3+ , and Cs 2 AgBiBr 6 :Na + , Ce 3+ DHPs films based devices are estimated to be 0.201, 0.204, 0.233, and 0.238 eV, respectively.…”

Stability Enhancement of CsPbBrI2 Glass Powder in PS Film via a Heat-Water Cyclic Treatment for Backlight Display

“…All-inorganic metal halide perovskite (CsPbX 3 , X = Cl, Br, I) nanocrystals (NCs) exhibit outstanding optical properties for display applications, such as high photoluminescence quantum yield (PLQY), narrow band emission, a wide color gamut range, and a high absorption coefficient, which have attracted researchers’ extensive attention. − However, defects in CsPbX 3 NCs and environmental factors (humidity, temperature, light, and oxygen) result in the instability of CsPbX 3 NCs. − Thus, experts and scholars proposed some strategies to overcome the shortcomings of CsPbX 3 NCs: coating CsPbX 3 with encapsulation materials, − selecting suitable ligands to passivate CsPbX 3 crystal defects, − introducing rare earth ions or transition metal ions into CsPbX 3 , and so on. − …”