Dual operation characteristics of resistance random access memory in indium-gallium-zinc-oxide thin film transistors

Abstract

In this study, indium-gallium-zinc-oxide thin film transistors can be operated either as transistors or resistance random access memory devices. Before the forming process, current-voltage curve transfer characteristics are observed, and resistance switching characteristics are measured after a forming process. These resistance switching characteristics exhibit two behaviors, and are dominated by different mechanisms. The mode 1 resistance switching behavior is due to oxygen vacancies, while mode 2 is dominated by the formation of an oxygen-rich layer. Furthermore, an easy approach is proposed to reduce power consumption when using these resistance random access memory devices with the amorphous indium-gallium-zinc-oxide thin film transistor.

Influences of film thickness and annealing temperature on properties of sol–gel derived ZnO–SnO 2 nanocomposite thin film

“…Therefore, ZnO-based oxide semiconductors have been regarded as highly promising candidates to replace typical Si-based materials in display devices. In order to improve the characteristics of ZnO thin films, researchers have focused on multicomponent oxide systems composed of heavy-metal cations in an effort to fabricate novel active materials, such as In-Zn-O (IZO) [5,6], In-Ga-Zn-O (IGZO) [7][8][9], and Zn-Sn-O (ZTO) [10,11]. Among them, IGZO has been intensively studied as a high-performance TOS material owing to excellent electrical properties in comparison with other materials.…”

Sub-0.5 V Highly Stable Aqueous Salt Gated Metal Oxide Electronics

“…Sol-gel derived amorphous metal-oxide (MO x ) semiconductors have been intensively studied for a variety of applications including displays 1 2 3 4 , sensors 5 6 , memories 7 8 , and photovoltaics 9 10 11 with a recent emphasis on flexible transparent electronics 12 13 14 15 16 . In certain areas of device applications, this class of electronic materials can now compete with or outperform silicon due to their unique attributes, for instance, low-temperature and solution processability 12 13 14 15 16 17 , high optical transparency 14 18 , and film uniformity 3 , in addition to excellent electrical properties.…”