In this letter, we fabricated resistance random access memory in a Pt/GaOx/TiN structure with a bipolar resistance switching characteristic and a bistable resistance ratio of about two orders by I-V sweeping. In order to increase the oxygen ion quantity in the gallium oxide layer, the proposed sample was sputtered in a mixed ambient of Ar and oxygen, and the resistance ratio was enhanced by 2.5 orders. In addition to the resistance ratio, set voltage distribution statistics show that the stability of gallium oxide sputtered in mixed Ar and oxygen gas was better than standard Ar-only sample.Index Terms-Gallium oxide, nonvolatile resistance switching memory, resistance random access memory (RRAM).

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In this study, a reduction of low resistive state (LRS) current is discovered in a V:SiO2/Si bi-layer structure with the addition of a Si layer. A Pt/V:SiO2/TiN structure is fabricated as the standard sample. The results of conduction mechanism analyses for LRS indicate that a SiO2 interfacial layer forms through oxidation of the inserted Si layer after the set process. The LRS current reduction can be attributed to the formation of this SiO2 layer. In addition, self-compliance behavior for the bi-layer structure during the set process further proves the existence of this SiO2 buffer layer in LRS.

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This report compares Mo-doped and undoped SiO2 thin films of a similar thickness as well as MoOx. The Mo-doped SiO2 film exhibited switching behavior after the forming process, unlike the undoped SiO2 film. Through material analyses, a self-assembled layer is observed in the Mo-doped SiO2 film. Due to the formation of this layer, the thickness required to be broken down is effectively reduced. Subsequently, the occurrence of the switching behavior in the thinner SiO2 film further confirmed the supposition. A comparison of the two switching behaviors shows that SiO2 dominates the switching characteristic of the Mo-doped SiO2.