Dual Resistive Switching Performance Derived from Ionic Migration in Halide Perovskite Based Memory

Abstract

Herein, we report an environmentally stable and friendly halide perovskite based resistive random access memory device with an Ag/PMMA/ (PMA) 2 CuBr 4 /FTO (PMMA = poly(methyl methacrylate); PMA = C 6 H 5 CH 2 NH 3 ) architecture. The device exhibits the coexistence of two bipolar resistive switching modes, including counterclockwise and clockwise switching characteristics. The devices with both switching modes show stable endurance (>100 cycles) and long retention performance (>10 4 s). By applying a suitable electrical stimulation, the counterclockwise and clockwise switching behaviors are interconvertible. Furthermore, the Au/PMMA/(PMA) 2 CuBr 4 /FTO and Ag/ (PMA) 2 CuBr 4 /FTO devices were fabricated to verify the origin of dual resistive switching behaviors. The similar dual resistive switching behaviors after electroforming processes of three types of memory devices suggest that the interconvertible dual resistive switching characteristics could be attributed to the ionic migration in the (PMA) 2 CuBr 4 perovskite layer.

Perovskite material-based memristors for applications in information processing and artificial intelligence

“…In recent years, perovskite memristors have been developed vigorously, and their excellent performances have also made them widely used in various fields, as shown in Table 1. 145–165 Perovskite memristors have made great progress in imitating the structure and function of neural synapses, as shown in Fig. 12.…”

Direct visualization and 3D reconstruction of conductive filaments in aSiO2 material-based memristive device

“…Memristive devices, emerging as a new generation of memory devices, are electric resistive switches that have been studied since the early 1970s. [1][2][3][4][5][6] The electrochemical metallization mechanism (ECM), which includes the growth and rupture of conductive filaments, has been employed to explain the resistive switching phenomena in Cu-or Ag-doped oxides or chalcogenide materials, such as Ag 2 S, CuS, and Ag-GeS x . Cu-GeS x , etc.…”

Cs3Bi2Br9 Halide Perovskite Nanostructure/Polymer Composite Films Resistive Memory

“…At present, Bi-based and Sb-based all-inorganic halide perovskite resistive devices have shown some performance benefits. − For example, Hu et al reported a resistive memory made of PET/ITO/Cs 3 Bi 2 I 9 /Au with a switching ratio of 10 3 and an operating voltage as low as 0.3 V . However, short retention intervals and an unequal distribution of switching parameters continue to be problems for these devices. − Since the formation and destruction of conducting filaments as a result of the directional movement of halide ions/vacancies within the perovskite film under electric field conditions determines the conductivity mechanism of HP resistive memory, , it is clear that the movement and accumulation of halide ions/vacancies greatly affect the device’s resistive performance.…”