Resistive switching random access memory (RRAM), also known as memristor, is regarded as an emerging nonvolatile memory and computing-in-memory technology to address the intrinsic physical limitations of conventional memory and the bottleneck of von Neumann architecture. In particular, halide perovskite RRAMs have attracted widespread attention in recent years because of their ionic migration nature and excellent photoelectric properties. This Perspective first provides a condensed overview of halide perovskite RRAMs based on materials, device performance, switching mechanism, and potential applications. Moreover, this Perspective attempts to detail the challenges, such as the quality of halide perovskite films, the compatible processing of device fabrication, the reliability of memory performance, and clarification of the switching mechanism, and further discusses how the outstanding challenges of halide perovskite RRAMs could be met in future research.
The two new metal cyanurates Ba2M(C3N3O3)2 (M
= Sr, Pb) were successfully grown by a solid-state cyclotrimerization
reaction. The electronic energy bands of Ba2M(C3N3O3)2 are totally divergent in
spite of their same structures and similar interlayer distances. Theoretical
calculations show the narrowing band gap of Ba2Pb(C3N3O3)2 stems from the strong
interaction between Pb 6p orbitals and anti-π orbitals in (C3N3O3)3– groups.
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