Halide Perovskites for Resistive Switching Memory

Kang, Kaijin; Hu, Wei; Tang, Xiaosheng

doi:10.1021/acs.jpclett.1c03408

Cited by 57 publications

(42 citation statements)

References 66 publications

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“…A memristor is a two-terminal device whose resistance depends on the history of current and voltage applied to the device. Memristors enable the storage of information by metastable modification of the device conductivity, (Pershin and Di Ventra, 2011;John et al, 2018a;Rahimi Azghadi et al, 2020;Fang et al, 2021;Kang et al, 2021;Kwak et al, 2021) and are the main candidates to realize artificial synapses for neuromorphic computation algorithms (Mehonic and Kenyon, 2016;Rahimi Azghadi et al, 2020;John et al, 2021a;Bou and Bisquert, 2021;Gogoi et al, 2021;Gong et al, 2021;Kang et al, 2021;Kwak et al, 2021;Christensen et al, 2022). Arranged in a crossbar format with a differential configuration, memristors allow synaptic propagation to be realized facilely via Kirchhoff's Current Law and Ohm's Law, enabling efficient in-memory computing (John et al, 2021b).…”

Section: Introductionmentioning

confidence: 99%

Inductive and Capacitive Hysteresis of Halide Perovskite Solar Cells and Memristors Under Illumination

et al. 2022

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The current–voltage curves of memristors exhibit significant hysteresis effects of use for information storage and computing. Here, we provide a comparison of different devices based on MAPbI3 perovskite with different contact configurations, from a 15% efficient solar cell to a pure memristor that lacks directional photocurrent. Current–voltage curves and impedance spectroscopy give insights into the different types of hysteresis, photocapacitance, and inductance present in halide perovskites. It is shown that both halide perovskite memristors and solar cells show a large inverted hysteresis effect at the forward bias that is related to the presence of a chemical inductor component in the equivalent circuit. Based on the results, we classify the observed response according to recombination current in devices with selective contacts, to voltage-activated single-carrier device conduction in devices with symmetric contacts. These findings serve to gain an understanding of the mechanism of memristor currents in mixed ionic-electronic conductors such as halide perovskites. We establish the link in the electrical response between solar cells and memristors.

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Section: Introductionmentioning

confidence: 99%

Inductive and Capacitive Hysteresis of Halide Perovskite Solar Cells and Memristors Under Illumination

et al. 2022

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“…[ 16,17 ] Compared with an electronic system, an optical system has a high bandwidth, which makes functionalized photons ideal information carriers. [ 18,19 ] In recent years, RS behaviors have been widely reported for halide perovskites, such as MAPbI 3 , [ 20,21 ] MAPbBr 3 , [ 22,23 ] CsPbI 3 , [ 24,25 ] and CsPbBr 3 . [ 26,27 ] The reported ON/OFF ratio can be reached as high as 10 9 .…”

Section: Introductionmentioning

confidence: 99%

Flexible Transparent High‐Efficiency Photoelectric Perovskite Resistive Switching Memory

Liu

Ren

et al. 2022

Adv Funct Materials

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Perovskite resistive random-access memory (RRAM) is a promising candidate for next-generation logic, adaptive and nonvolatile memory devices, because of its high ON/OFF ratio, low-cost fabrication, and good photoelectric regulation performance. In this work, a flexible transparent CsPbBr 3 quantum dots (QDs) mixed in graphene oxide (GO) RRAM device is introduced, which is controllable by both an electric field and illumination. Under illumination, the ON/OFF ratio of the Ag/CsPbBr 3 QDs:GO/ITO device is ≈1.4 × 10 7 , which is 1077 times larger than that in the dark condition (1.3 × 10 4 ). The SET/RESET voltages are +2.28/−2.04 V and +1.68/−1.08 V under the dark and illumination conditions, respectively. As a flexible memory device, the resistances are little affected by the bending curvatures and load-cycling. Before and after 10 4 bending cycles with a radius of 5 mm under illumination, the ON/OFF ratios keep in the same order, which are 2.5 × 10 7 and 2.3 × 10 7 , respectively. The ratio values are 8.8 × 10 4 and 2.9 × 10 4 under the dark condition, respectively. This innovative resistive memory based on the CsPbBr 3 QDs:GO hybrid film supports a huge space for the development of photoelectrical dual-controlled flexible RRAM devices.

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“…3D lead halide perovskites quantum dots (PQDs) of APbX 3 (A = Cs + , CH 3 NH 3 + , CH(NH 2 ) 2 + ; X = Cl, Br, I) have exhibited tremendous applications in wide optoelectronic fields including solar cell, optical sensor, photodetector, laser, and light‐emitting diodes with multiple superiorities of high defect tolerance and absorption coefficients, long carrier diffusion lengths, highly tunable band gaps, etc. [ 1–6 ] As one of the most promising candidates of PQDs, 0D perovskites have emerged as new kind of functional luminescent materials due to diversified photoluminescence (PL) performance and ultrahigh emission efficiency with unique applications in solid‐state light emitting diodes, X‐ray scintillation, remote thermography, etc. [ 7–11 ] Especially, the 0D organic–inorganic hybrid perovskites deliver highly adjustable structural architectures and PL properties derived from the synergistic effect of versatile organic species and anionic blocks.…”

Section: Introductionmentioning

confidence: 99%

Ultrastable 0D Organic Zinc Halides with Highly Efficient Blue Light Emissions

Sun

et al. 2022

Advanced Optical Materials

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functional luminescent materials due to diversified photoluminescence (PL) performance and ultrahigh emission efficiency with unique applications in solid-state light emitting diodes, X-ray scintillation, remote thermography, etc. [7][8][9][10][11] Especially, the 0D organic-inorganic hybrid perovskites deliver highly adjustable structural architectures and PL properties derived from the synergistic effect of versatile organic species and anionic blocks. [12][13][14] In these 0D hybrid perovskites, the spatially discrete metal halide units are wrapped by bulk organic components with perfect core-shell structures from molecular level, which mean that the semiconducting halide species periodically embed in the insulated organic matrix as light emitting centers. Benefiting from the strong spatial and quantum confinement effect from organic walls, the photoinduced carriers are highly localized in the discrete metal halide species, which leads to firmly confined bound excitons with large exciton binding energy and high photoluminescence quantum yield (PLQY) at room temperature. [15][16][17] At the same time, the strong electron-quantum coupling transiently localizes the excitons along with large excited-state structural deformation, which produces self-trapped excitons (STEs) with lower excited state energy. Therefore, 0D perovskites incline to display intrinsic lower-energy broadband light emissions with large Stokesshifts, which are different from the narrow emission bands of 3D APbX 3 PQDs. [18][19][20][21][22] As a result, lower-energy green, yellow, and red light emissions are easily realized in 0D halide perovskites, but higher-energy blue light emission remains extremely challenging, especially in pure-blue spectral region (460-480 nm). [23][24][25][26] Simultaneously considering the biological toxicity of Pb 2+ ion and lower PLQY of blue emitting perovskite, it is greatly significant and stringent to design lead-free 0D perovskites comprising environment-friendly metals as highly efficient blue emitters to achieve balanced development of three primary-color in high-definition display and lighting devices.Another critical bottleneck that restricts the practical applications of perovskites is the poor stability toward various chemical and physical factors including water, humid air, polar solvents, light, etc., due to the ionic nature of material itself. [27] As a result, the PL emission is easily quenched by these external stimuli along with the structural decomposition or phase transitions, especially perovskites without additional protection Despite remarkable luminescent performance of 0D lead halide perovskites, achieving highly efficient blue light emission is extremely challenging and crucial for this domain. Considering the high toxicity of Pb 2+ ion, it is significant to explore water-stable lead-free 0D halides as highly efficient and stable blue emitting materials. To address these issues, a family of 0D hybrid zinc halides of AZnBr 4 (A = EP, BP, and TMPDA) based on discrete [ZnBr 4 ] 2− tetrahedrons...

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Halide Perovskites for Resistive Switching Memory

Cited by 57 publications

References 66 publications

Inductive and Capacitive Hysteresis of Halide Perovskite Solar Cells and Memristors Under Illumination

Inductive and Capacitive Hysteresis of Halide Perovskite Solar Cells and Memristors Under Illumination

Flexible Transparent High‐Efficiency Photoelectric Perovskite Resistive Switching Memory

Ultrastable 0D Organic Zinc Halides with Highly Efficient Blue Light Emissions

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