A novel composite consisting of graphene-like MoS₂ nanosheets and ultrasmall Fe₃O₄ nanoparticles (≈3.5 nm) is synthesized as an anode for lithium ion battery application. In such composite anode, MoS₂ nanosheets provide flexible substrates for the nanoparticle decoration, accommodating the volume changes of Fe₃O₄ during cycling process; while Fe₃O₄ nanoparticles primarily act as spacers to stabilize the composite structure, making the active surfaces of MoS₂ nanosheets accessible for electrolyte penetration during charge/discharge processes. Owing to the high reversible capacity provided by the MoS₂ nanosheets and the superior high rate performance offered by ultrasmall Fe₃O₄ nanoparticles, superior cyclic and rate performances are achieved by FeFe₃O₄/MoS₂ anode during the subsequent electrochemical tests, delivering 1033 and 224 mAh g⁻¹ at current densities of 2000 and 10,000 mA g⁻¹, respectively.

All-inorganic perovskite CsPbX (X = Cl, Br, I) and related materials are promising candidates for potential solar cells, light emitting diodes, and photodetectors. Here, a novel architecture made of CsPbX /ZnS quantum dot heterodimers synthesized via a facile solution-phase process is reported. Microscopic measurements show that CsPbX /ZnS heterodimer has high crystalline quality with enhanced chemical stability, as also evidenced by systematic density functional theory based first-principles calculations. Remarkably, depending on the interface structure, ZnS induces either n-type or p-type doping in CsPbX and both type-I and type-II heterojunctions can be achieved, leading to rich electronic properties. Photoluminescence measurement results show a strong blue-shift and decrease of recombination lifetime with increasing sulfurization, which is beneficial for charge diffusion in solar cells and photovoltaic applications. These findings are expected to shed light on further understanding and design of novel perovskite heterostructures for stable, tunable optoelectronic devices.

All-inorganic perovskite CsPbX (X = Cl, Br, or I) is widely used in a variety of photoelectric devices such as solar cells, light-emitting diodes, lasers, and photodetectors. However, studies to understand the flexible CsPbX electrical application are relatively scarce, mainly due to the limitations of the low-temperature fabricating process. In this study, all-inorganic perovskite CsPbBr films were successfully fabricated at 75 °C through a two-step method. The highly crystallized films were first employed as a resistive switching layer in the Al/CsPbBr/PEDOT:PSS/ITO/PET structure for flexible nonvolatile memory application. The resistive switching operations and endurance performance demonstrated the as-prepared flexible resistive random access memory devices possess reproducible and reliable memory characteristics. Electrical reliability and mechanical stability of the nonvolatile device were further tested by the robust current-voltage curves under different bending angles and consecutive flexing cycles. Moreover, a model of the formation and rupture of filaments through the CsPbBr layer was proposed to explain the resistive switching effect. It is believed that this study will offer a new setting to understand and design all-inorganic perovskite materials for future stable flexible electronic devices.

mixture at 150 °C for 2 min and then Cs-oleate solution (0.4 mL in ODE) was quickly injected. After 5 s, the reaction mixture was cooled by the ice-water bath to room temperature.

AgInS 2 nanocrystals have attracted intense attention due to their promising applications in printable solar cells, light-emitting diode (LED), and biological labeling. Although much effort has been made to develop various synthesis methods to prepare AgInS 2 nanocrystals, it remains a goal to obtain high quality AgInS 2 nanocrystals. In this work, Zn-doped AgInS 2 nanocrystals were synthesized by diffusing Zn into the preformed AgInS 2 seeds at high temperature in solution. The resulting Zn-doped AgInS 2 nanocrystals had welldefined spherical morphology with narrow size distribution. By varying the reaction temperature, the emission wavelengths of the obtained Zn-doped AgInS 2 nanocrystals could be adjusted from 520 to 680 nm. The quantum yield of the obtained alloyed nanocrystals could reach 41%, which was reasonably good as compared to those of the previously reported. The obtained Zn-doped AgInS 2 nanocrystals showed promising applications in cell labeling.