Durability of rewritable phase-change Ge X Sb Y Te1 − X − Y memory devices

Power factor investigation of RF magnetron sputtered c-GeSbTe thin film

“…The as-deposited thin film shows in an amorphous structure while the annealed film shows in a cubic structure (c-GeSbTe), as confirmed by major XRD peaks of (111), (200), (222), and (220) planes according to PDF# 054-0484 data [12]. These XRD peaks have been demonstrated in the crystallinity and the crystal structure of intermediate states during the amorphous-crystalline solid-state transformation within sequentially annealing temperature [7][8][9][10][11]13]. The crystallite sizes (D), lattice strains (ε), and lattice parameters of c-GeSbTe thin films were evaluated from a width at half maximum (FWHM) of XRD patterns, based on the Scherrer's equation as the following:…”

“…Moreover, in modern technology, Ge-Sb-Te chalcogenide ternary compounds are widely used because of their stable phase transformation between amorphous and crystalline phases [7]. The Ge-Sb-Te system has studied the several possible compositions of GeSb 2 Te 4 , GeSb 4 Te 7 , and Ge 2 Sb 2 Te 5 shown in a Ge-Sb-Te phase diagram [8][9]. The Ge 2 Sb 2 Te 5 has been the preferred thermoelectric material with high Seebeck coefficient and low electrical resistivity [10][11].…”

“…The Ge 2 Sb 2 Te 5 has been the preferred thermoelectric material with high Seebeck coefficient and low electrical resistivity [10][11]. Nevertheless, other GeSbTe compositions, for example, Sb 2 Te 3 -GeTe and Ge x Sb y Te 1-(x + y) are also promising materials for thermoelectric applications [8], but have not been fully explored. The aim of this work is to deposit the GeSbTe thin film by a radio frequency (RF) magnetron sputtering from the initial GeSbTe material of a 1:1:1 atomic ratio and annealing treatments at difference temperature.…”

Thermoelectric properties of c -GeSb 0.75 Te 0.5 to h -GeSbTe 0.5 thin films through annealing treatment effects

“…The variation of structures from FCC to HCP at 653 K has the highest concentration of charge carriers, the lowest electrical resistivity, and the highest power factor, respectively. Hence, the GST system has become a new material of interest for thin-film thermoelectrics and other applications within the many to compound from phase diagram [18] and electronic structure like to semi-metallic behavior [19] such as; Ge 2 Sb 2 Te 5 , GeSb 2 Te 4 and GeSb 4 Te 7 , etc. In order to prepare thin films of the chalcogenide materials, several deposition techniques can be utilized, i.e., by thermal evaporation [20], magnetron sputtering [21], pulsed laser deposition (PLD) [22], solegel process [23], and chemical vapor deposition (CVD) [24].…”