Power factor investigation of RF magnetron sputtered c-GeSbTe thin film

Vora–ud, Athorn; Horprathum, Mati; Eiamchai, Pitak; Muthitamongkol, Pennapa; Thanachayanont, Chanchana; Somkhunthot, Weerasak; Seetawan, Tosawat

doi:10.1016/j.surfcoat.2016.02.021

Surface and Coatings Technology

2016

DOI: 10.1016/j.surfcoat.2016.02.021

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Power factor investigation of RF magnetron sputtered c-GeSbTe thin film

Athorn Vora–ud

Mati Horprathum

Pitak Eiamchai

et al.

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Cited by 12 publications

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“…c) compares the Seebeck coefficients of the Te films with those of bulk samples reported in previous studies[20][21][22][23][24][25][26][27][28][29][30][31][32][33][34][35]. Notably, most thin films and Te based films exhibited high Seebeck coefficients at high processing temperatures over the 200 °C.…”

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confidence: 78%

Electrical conductivity, Seebeck coefficient, and crystal growth of p-type tellurium films through temperature dependent RF sputtering

Kim

Yanagi

et al. 2023

Nanotechnology

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Te thin films have recently received considerable attention owing to its superior electrical and thermoelectric properties. During the deposition process, if the temperature of the substrate is raised, high crystallinity and improved electrical properties can be expected. In this study, we used radio frequency (RF) sputtering for Te deposition to study the relationship between the deposition temperature, crystal size, and electrical performance.As the deposition temperature is increased from room temperature to 100℃, we observed an increase in crystal size from the X-ray diffraction patterns and full-width half maximum calculations. With this grain size increment, the Hall mobility and Seebeck coefficient of the Te thin film increased significantly from 16 to 33 cm² V⁻¹ s⁻¹ and 50 to 138 μV∙K⁻¹, respectively. This study reveals the potential of a facile fabrication method for enhanced Te thin films using temperature control and highlights the importance of the Te crystal structure in determining the electrical/thermoelectrical properties. These findings are particularly significant for the development of semiconductor material systems for various applications, including thermoelectric devices, CMOS, FET, and solar devices.

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mentioning

confidence: 78%

Electrical conductivity, Seebeck coefficient, and crystal growth of p-type tellurium films through temperature dependent RF sputtering

Kim

Yanagi

et al. 2023

Nanotechnology

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Spectroscopic analysis and thermoelectric properties of ITO/Cu/Ni/ITO multilayer by RF sputtering

Tchenka,

Agdad,

Amiri

et al. 2024

Appl. Phys. A

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Spectroscopic Investigations and Thermoelectric Properties of RF-Sputtered ITO Thin Films

Tchenka

Agdad

Mellalou

et al. 2022

J. Electron. Mater.

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Power factor investigation of RF magnetron sputtered c-GeSbTe thin film

Cited by 12 publications

References 18 publications

Electrical conductivity, Seebeck coefficient, and crystal growth of p-type tellurium films through temperature dependent RF sputtering

Electrical conductivity, Seebeck coefficient, and crystal growth of p-type tellurium films through temperature dependent RF sputtering

Spectroscopic analysis and thermoelectric properties of ITO/Cu/Ni/ITO multilayer by RF sputtering

Spectroscopic Investigations and Thermoelectric Properties of RF-Sputtered ITO Thin Films

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