DX centre characterization in Se-doped AlGaAs under hydrostatic pressure

Calleja, E.; García, Félix; Romero, Álvaro; Muñoz, E.; Powell, Adrian R.; Rockett, Peter; Button, C.; Roberts, J. S.

doi:10.1088/0268-1242/7/6/007

Cited by 5 publications

References 48 publications

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Detailed electrical characterization of DX centers in Se-doped AlxGa1−xAs

Dueñas

Pinacho

Castán

et al. 1997

Journal of Applied Physics

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DX centers in selenium doped AlxGa1−xAs with two values of the aluminum content, x=0.34 and 0.48, are carefully analyzed by three different techniques: deep level transient spectroscopy (DLTS), admittance spectroscopy, and the capacitance voltage transient technique (CVTT). We use conceptual differences between these techniques to extract important information about the nature of the DX centers. Good agreement is found between the capacitance transients recorded during the DLTS measurements and those obtained by CVTT at every point in the space charge region. From that, we conclude that is the very nature of the DX centers the solely responsible for the anomalies found in DLTS results. The main cause for these anomalies is the thermal dependence of the electron capture rate of these centers. CVTT curves also reveal that no electric field enhanced emission processes take place for these centers. For our analysis of the shape of the DLTS and admittance spectroscopy curves we conclude that several DX levels exist, according to the alloy broadening theory. Finally, some simulations of the DLTS spectra were made. These calculations reveal the important effect of experimental parameters such as the filling pulse duration, the velocity of the temperature scan, and the initial conditions of the occupation factor of the deep levels on the DLTS curves.

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Detailed electrical characterization of DX centers in Se-doped AlxGa1−xAs

Dueñas

Pinacho

Castán

et al. 1997

Journal of Applied Physics

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On the spectroscopy of DX centres by transient techniques at constant capacitance

Izpura

Mondaray

Muñoz

et al. 1995

Semicond. Sci. Technol.

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In systems with no shallow levels, the features of constant-capacitance techniques for mirroring the emission processes from a deep donor are presented.The main abjec!iue is ! o de!ermine the intensic sources o! non=exponex!ia!i!y in these experiments. The analysis is focused on the problem of DX centres as controlling the electrical properties of n-type AlGaAs alloys for AI mole fractions ( x ) in the 0.2 c x c 0.4 range. Using a Poisson plus a dynamical evolution equations solver, the presence of intrinsic non-exponentiality in constant-capacitance transients under thermal emission conditions, and its absence under optical conditions for Si and Se donors were analysed and fitted by sums of exponential decays. While the idea of DX local environment effects is confirmed, a single photoionization rate was detected. It is concluded that constant-capacitance techniques must be used to characterize systems governed by a deep level.exci!a!ionl is shown. Experiments! !ransien!s taken under constant-capacitance

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A critical analysis of capacitance transient signals due to DX centres in n-type AlGaAs

Izpura¹,

Muñoz²,

Calleja³

1993

Semicond. Sci. Technol.

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In n-type AlGaAs layers, the evolution of high frequency capacitance with time due to electron emission from DX centres has been computer simulated. The electron density profiles during the emission and capture processes are also presented. The effects of switching voltage amplitude and DX level position in the gap have been considered. A critical discussion of the signals obtained, the intrinsic sources of non-exponentiaiity and the reliabili!y of the DX parameters extracted, are presented. The artifacts due to the OLE processing of the capacitance transients generated were also considered. The subject of alloy broadening has been addressed, and It has been unambiguously shown that intrinsic broadening may only account for less than half the measured broadening in Ai,,G%,As: Si.

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DX centre characterization in Se-doped AlGaAs under hydrostatic pressure

Cited by 5 publications

References 48 publications

Detailed electrical characterization of DX centers in Se-doped AlxGa1−xAs

Detailed electrical characterization of DX centers in Se-doped AlxGa1−xAs

On the spectroscopy of DX centres by transient techniques at constant capacitance

A critical analysis of capacitance transient signals due to DX centres in n-type AlGaAs

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