Dy3+and Mn2+ emission in KMgSO4Cl phosphor

Structural Analysis and Infrared Emission from Ti+3 Doped AlN Deposited on Si(100) and Si(111) Substrates and Optical Fibers

“…Several researchers, working on amorphous materials, have reported that low temperature is a necessary condition to grow amorphous films [7,9,12,14]. In the present work, we report that low temperature is not the only necessary condition required to grow amorphous materials but the size and shape of the substrate used also play an important role in the structure and morphology of the grown films.…”

“…The transition group metals have a common feature: partial occupancy of the d shells. In III-V compounds, this feature gives rise to several important technological applications particular in production of high resistivity materials and photonic devices through transition-metal doping [3,4,[8][9][10].…”

“…Recent progress toward nitride-based light-emitting diode and electroluminescent devices (ELDs) has been made using crystalline and amorphous AlN doped with a variety of transition metals [4,9,10]. The amorphous III-nitride semiconductors are equally important like their crystalline counterpart because the amorphous material can be grown at room temperature with little stress due to lattice mismatch [11][12][13][14].…”

EPR and luminescence properties of LiGa5O8:Mn green emitting phosphor

“…However, for the Mn-doped LiGa 5 O 8 , the studies are much fewer. The spectroscopy of the Mn 2+ ions incorporated as an impurity in various host materials has been well studied [13][14][15][16] in the visible (green and red) region. This paper reports the influence of manganese impurity on the luminescence and spectroscopic properties of the LiGa 5 O 8 host.…”

Cathodoluminescence from Amorphous and Nanocrystalline Nitride Thin Films Doped with Rare Earth and Transition Metals

“…Hidalgo (Hidalgo, Mendez et al 1998) and Muller (Muller, Zhou et al 2009) studied that partially occupied d-shells of these elements play important role in the luminescence and spectroscopy of these elements. Thurbide (Thurbide and Aue 2002), Gedam (Gedam, Dhoble et al 2007), Grinberg (Grinberg, Barzowska et al 2001) and Lapraz (Lapraz, Iacconi et al 1991) reported that in many host materials, these partially occupied d-shells give rise to several important technological applications and in particular, production of high resistivity materials and photonic devices through transition-metal doping has been widely used. Maqbool (Maqbool, Wilson et al 2010) and Martin (Martin, Spalding et al 2001) showed that thermal activation, the oxygen effect and co-dopants are good tools to obtain high efficiency and improved luminescence from these metal ions.…”