Dynamic Avalanche Free Design in 1.2kV Si-IGBTs for Ultra High Current Density Operation

Luo, Peng; Madathil, Sankara Narayanan Ekkanath; Nishizawa, Satoshi; Saito, Wataru

doi:10.1109/iedm19573.2019.8993596

Cited by 10 publications

(14 citation statements)

References 3 publications

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“…Several approaches such as deep P-float [9] and emitter gate with additional P-layer [7] have been reported to suppress but not eliminate DA in the TIGBTs. More recently, a DA free design has been experimentally demonstrated in the Trench Clustered IGBT (TCIGBT) [10]. Due to self-clamping feature and PMOS actions, the TCIGBT shows DA free performance with low power losses.…”

Section: (Corresponding Author: Peng Luo)mentioning

confidence: 99%

“…DA will take place if the resulting electric field (Emax) exceeds the critical electric field (E cr ), which can occur even at a voltage well below the static breakdown voltage. The detailed schematic of DA in the turn-off transient of trench gated IGBTs has been explained in [10]. The occurrence of DA results in additional excess carriers within the device, which slows down the discharging of C gc (expansion of depletion region) and affects the dV/dt.…”

Section: Dv/dt Limitation By Dynamic Avalanche In Tigbtsmentioning

confidence: 99%

“…As a fundamental solution towards the DA elimination, TCIGBT is attractive because of its design for electric field management and unique PMOS actions [10]. Fig.…”

Section: Da Free Solution -High Dv/dt Controllability By Tcigbtmentioning

confidence: 99%

“…However, the TCIGBT shows a linear decrease of E off as R g reduces due to DA free and the E off is much lower than that of the TIGBT due to PMOS actions. The detailed reason for the reduction in E off can be explained as follows: During the turn-off of TIGBT structure, hole current flows along the trench gate bottom and side wall to the P-base region [15]. As the hole current concentrates at the trench gate bottom, the hole evacuation resistance is high.…”

Section: Da Free Solution -High Dv/dt Controllability By Tcigbtmentioning

confidence: 99%

See 3 more Smart Citations

Turn-OFF dV/dt Controllability in 1.2-kV MOS-Bipolar Devices

Luo

Madathil

Nishizawa

et al. 2021

IEEE Trans. Power Electron.

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Turn-off dV/dt controllability is an essential feature in IGBTs for flexible design in power switching applications. However, the occurrence of Dynamic Avalanche (DA) during the turn-off transients plays a key role on the turn-off power loss, dV/dt controllability and safe operating area of IGBTs. This paper aims to clarify the impact of DA on the turn-off characteristics of 1.2 kV trench IGBTs through 3-D TCAD simulations as well as experimental demonstrations. Measurement results show that DA is enhanced at high current density and high supply voltage conditions, which aggravates its influence on the dV/dt controllability as well as turn-off power loss. To eliminate the DA for high current density and low loss operations, a DA free design is experimentally demonstrated in the Trench Clustered IGBT (TCIGBT). Due to effective management of electric field and unique PMOS actions during turn-off, TCIGBT can retain high dV/dt controllability and low power loss at high current density operations.

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Section: (Corresponding Author: Peng Luo)mentioning

confidence: 99%

Section: Dv/dt Limitation By Dynamic Avalanche In Tigbtsmentioning

confidence: 99%

“…As a fundamental solution towards the DA elimination, TCIGBT is attractive because of its design for electric field management and unique PMOS actions [10]. Fig.…”

Section: Da Free Solution -High Dv/dt Controllability By Tcigbtmentioning

confidence: 99%

Section: Da Free Solution -High Dv/dt Controllability By Tcigbtmentioning

confidence: 99%

See 2 more Smart Citations

Turn-OFF dV/dt Controllability in 1.2-kV MOS-Bipolar Devices

Luo

Madathil

Nishizawa

et al. 2021

IEEE Trans. Power Electron.

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show abstract

“…In previous work, an in-depth analysis of the TIGBT switching behavior focusing on DA was presented through calibrated 3D TCAD models to show, for the first time, that removal of the high electric field concentration beneath the trench gates was the most important solution to manage the DA in TIGBTs. Moreover, for the first time, a DA free design with high current density operation capability was demonstrated in a Trench Clustered IGBT (TCIGBT), through in both simulations and experiments [10]. In this paper, the operation of this device is studied in detail to explain the reason for its DA free behavior.…”

Section: Introductionmentioning

confidence: 99%

Evaluation of Dynamic Avalanche Performance in 1.2-kV MOS-Bipolar Devices

Luo

Madathil

Nishizawa

et al. 2020

IEEE Trans. Electron Devices

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Improving dynamic characteristics for IGBTs by using interleaved trench gate

Deng

Tan

et al. 2023

Chinese Phys. B

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In this paper, a novel trench insulated gate bipolar transistor (IGBT) with improved dynamic characteristics is proposed and investigated. The poly gate and poly emitter of the proposed IGBT are placed alternately along the trench. A self-biased p-MOSFET is formed at the emitter side. Due to this unique 3-D trench architecture, both the turn-off and turn-on characteristics can be greatly improved. During turn-off transients, the maximum electric field and impact ionization rate of the proposed IGBT are reduced and the dynamic avalanche (DA) is suppressed. The turn-off loss (E off) of the proposed IGBT is also decreased by 31% for the same ON-state voltage, when compared with the carrier-stored trench gate bipolar transistor (CSTBT). During turn-on transients, the built-in p-MOSFET decreases the reverse displacement current (I G_dis), contributing to low dI C/dt. As a result, the proposed IGBT achieves a 35% decrease in collector surge current (I surge) and 52% decrease in dI C/dt, when compared with the CSTBT with the same turn-on loss (E on), at I C = 20 A/cm2.

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Dynamic Avalanche Free Design in 1.2kV Si-IGBTs for Ultra High Current Density Operation

Cited by 10 publications

References 3 publications

Turn-OFF dV/dt Controllability in 1.2-kV MOS-Bipolar Devices

Turn-OFF dV/dt Controllability in 1.2-kV MOS-Bipolar Devices

Evaluation of Dynamic Avalanche Performance in 1.2-kV MOS-Bipolar Devices

Improving dynamic characteristics for IGBTs by using interleaved trench gate

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