Evaluation of Dynamic Avalanche Performance in 1.2-kV MOS-Bipolar Devices

Abstract

This is a repository copy of Evaluation of dynamic avalanche performance in 1.2kV MOSbipolar devices.

Investigation of turn-on performance in 1.2 kV MOS-bipolar devices

“…However, it is found that the DA phenomenon limits the reduction of E off of conventional TIGBT and scaled TIGBTs. 9) Moreover, experimental results confirm that the DA phenomenon is enhanced at high current density operations, 9) which limits the maximum operating current density and affects the long-term reliability. 5,7) Therefore, the DA must be suppressed or eliminated when increasing the operating current density of the MOS-bipolar power switches.…”

“…[5][6][7][8] In comparison, the TCIGBTs have been experimentally evaluated to show DA free behavior and low power losses at high current density operations. [9][10][11] In addition to the onstate and turn-off behavior, the turn-on performance is also important for MOS-gated bipolar devices to achieve high switching frequency operations with low power losses.…”

Experimental Demonstration of a 1.2-kV Trench Clustered Insulated Gate Bipolar Transistor in Field-Stop Technology

“…The TCIGBT features a MOSgated thyristor structure, which consists of P-anode, N-drift, P-well and N-well. The detailed mechanisms of turn-on, selfclamping feature and PMOS actions have been explained in [10,12]. Moreover, the dummy regions are connected to the emitter, which provides a direct path for excessive holes to be evacuated during turn-off.…”

“…This is because DA-free operation can enable reduction in the gate resistance, reducing switching losses and enhancing reliability. The Trench Clustered IGBT (TCIGBT) is the only DA-free solution that has been experimentally proven so far [7][8][9][10][11]. Its self-clamping feature and PMOS operation are effective in managing the peak electric field distribution beneath trench gates.…”

“…Its self-clamping feature and PMOS operation are effective in managing the peak electric field distribution beneath trench gates. In addition, the inherent thyristor operation offers much lower on-state losses even when comparing the NPT-TCIGBT to the FS-IGBT [10,11]. Therefore, TCIGBT provides a highly promising solution to move beyond the limits of current IGBT technologies.…”