Dynamic behavior of Ti/4H-SiC Schottky diodes

Shili, K.; Karoui, M. Ben; Gharbi, R.; Abdelkrim, M.; Fathallah, M.; Ferrero, Sergio

doi:10.1109/melcon.2012.6196509

Cited by 3 publications

(2 citation statements)

References 6 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The response of the developed Simulink model is in agreement with the switching performance of the SiC MOSFET, while exhibiting similar accuracy as SaberRD. Some discrepancies observed at the v DS voltage during turn-off are attributed to an incomplete model of the antiparallel load diode [15], [16]. Such modeling is beyond the scope of this paper.…”

Section: Switching Performance Validationmentioning

confidence: 95%

An accurate Matlab/Simulink based SiC MOSFET model for power converter applications

Kampitsis

Antivachis

Kokosis

et al. 2015

2015 IEEE Applied Power Electronics Conference and Exposition (APEC)

View full text Add to dashboard Cite

In this paper, an analytical model of a silicon carbide power DMOSFET is developed in Matlab/Simulink environment, intended for high performance converter simulations. The proposed Simulink-based model is a highly useful tool that allows users to study system response to transient phenomena and calculate energy losses in a variety of topologies, control strategies and operating conditions. The static characteristics of the model and its performance during hard switching are validated through experimental testing and comparison with similar models in other commercially available simulation platforms. A 1 kW single phase, high frequency inverter is developed using SiC MOSFETs to investigate the accuracy of the proposed model when simulating a complete power converter.

show abstract

Section: Switching Performance Validationmentioning

confidence: 95%

An accurate Matlab/Simulink based SiC MOSFET model for power converter applications

Kampitsis

Antivachis

Kokosis

et al. 2015

2015 IEEE Applied Power Electronics Conference and Exposition (APEC)

View full text Add to dashboard Cite

show abstract

“…However, because of the more heavily doped epitaxy layer, the depletion capacitance of SiC SBD is usually larger than Si PIN [8]. A second‐order RLC network will be made up by the depletion capacitance, depletion resistance, parasitic stray inductance and series resistance when SiC SBD is applied in a chopper circuit, resulting in the oscillations/ringings of the output current and voltage of the diode [9–12]. This will cause system stability problems like electromagnetic interference (EMI) and additional energy losses especially in power converter applications [13, 14].…”

Section: Introductionmentioning

confidence: 99%

Physics‐based spice model on the dynamic characteristics of silicon carbide Schottky barrier diode

Zhou

Wang

Yue

et al. 2016

IET Power Electronics

View full text Add to dashboard Cite

Silicon carbide Schottky barrier diodes (SiC SBDs) are poised to replace silicon PIN diodes as a new choice for the high power and high frequency applications. However, SiC SBDs suffer from ringing which may induce additional power losses when applied in chopper circuit, regarded as the interaction among the depletion capacitance, depletion resistance, parasitic stray inductance and series resistance. The existing SiC SBD models generally treat the resistances as constants and ignore the influence of the MOS, which deviate the switching commutation process significantly on the ringing frequency and amplitude. In this study, a more accurate Spice model of SiC SBD has been developed in which voltage dependent non-linear depletion capacitance and resistances are all considered in the transient analysis based on semiconductor physics, while the Miller capacitance of the MOS performing as a switch in the circuit is also taken into account. The improved model and analysis are validated by the better agreement with the experiments compared with the existing models on the dynamic characteristics.

show abstract

Series resistance study of Schottky diodes developed on 4H-SiC wafers using a contact of titanium or molybdenum

Shili

Karoui

Gharbi

et al. 2013

Microelectronic Engineering

View full text Add to dashboard Cite

Dynamic behavior of Ti/4H-SiC Schottky diodes

Cited by 3 publications

References 6 publications

An accurate Matlab/Simulink based SiC MOSFET model for power converter applications

An accurate Matlab/Simulink based SiC MOSFET model for power converter applications

Physics‐based spice model on the dynamic characteristics of silicon carbide Schottky barrier diode

Series resistance study of Schottky diodes developed on 4H-SiC wafers using a contact of titanium or molybdenum

Contact Info

Product

Resources

About