Dynamic-Carrier-Distribution-Based Compact Modeling of p–i–n Diode Reverse Recovery Effects

Nakashima, Junichi; Miyake, M.; Miura-Mattausch, Mitiko

doi:10.7567/jjap.51.02bp06

Cited by 13 publications

(3 citation statements)

References 11 publications

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“…The PiN diode as basic switching element is being pursued in low forward voltage conduction drop and power loss in rectifying circuit. Conventionally, the conduction capability of PiN diode can be improved by the high level of carrier-injection effect [1]. The forward voltage drop is dominated by injected hole in the i-layer [2,3].…”

Section: Introductionmentioning

confidence: 99%

“…The carrier injection is also introduced in insulated gate bipolar transistor (IGBT) for enhancing injection effect [4]. However, the high injection results in large reverse recovery time [1,5]. Hence, the power loss is increased during the offstate [5,6].…”

Section: Introductionmentioning

confidence: 99%

“…Hence, the power loss is increased during the offstate [5,6]. Time of the carrier stored in the i-layer is mainly attributed to its lifetime [1,4,7]. In this paper, we propose a novel controllable injection diode (CID) based on controllable carrier-injection mechanism (CCIM).…”

Section: Introductionmentioning

confidence: 99%

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A novel controllable carrier-injection mechanism in high voltage diode for reducing switching loss

Yang

Cai

et al. 2014

IEICE Electron. Express

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A controllable injection diode (CID) is proposed for reducing switching loss and a novel controllable carrier-injection mechanism (CCIM) is investigated in the new device. The CCIM reveals that due to the limit carrier lifetime, the carrier-injection can be controlled in one narrow-pulse time. Based on the CCIM, the CID takes advantage of a PiN diode and a junction field-effect transistor (JFET) for modulating the forward voltage drop. The simulation results show that the forward voltage drop can be modulated to 0.54 V at minimum by the carrier-injection enhancement at 45 A/cm 2 . On the other hand, the JFET weakens carrier-storage effect in the i-layer and the reverse recovery time of the CID is about 0.27 µs at rectifying 50 kHz, which is sufficiently faster than 1.1 µs of the conventional diode. Therefore, the switch loss of the CID can be decreased in a DC-DC buck converter.

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Section: Introductionmentioning

confidence: 99%