Piezoelectric domains in BiFeO3 films grown via MOCVD: Structure/property relationship

Condorelli, Guglielmo G.; Catalano, Maria R.; Smecca, Emanuele; Nigro, Raffaella Lo; Malandrino, Graziella

doi:10.1016/j.surfcoat.2013.06.081

Cited by 12 publications

(17 citation statements)

References 20 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…These films possess a rhombohedral structure as confirmed through a noninvasive approach, recording a θ–2θ scan in the 50–54° range at χ angle equal to 26° . This result is in good agreement with previously reported literature data, which affirm a distortion from rhombohedral to tetragonal only for very thin films, i.e.…”

Section: Mocvd Growth Of Bifeo3 and Doped‐bifeo3 Filmssupporting

confidence: 91%

“…Deposition temperature (T dep ) was shown to have a great effect on the BiFeO 3 functional properties . In fact, even if it has a slight effect on structure and morphology of films, it has a major impact on functional properties, with a T dep of 800 °C yielding the most promising films in terms of piezo‐ and ferro‐electric properties . This deposition temperature may be compared with the lower temperature applied in a recently reported MOCVD process using different Bi precursors .…”

Section: Mocvd Growth Of Bifeo3 and Doped‐bifeo3 Filmsmentioning

confidence: 99%

“…In this short review, we focus our attention on the potential of a MOCVD approach to the synthesis of pure and doped BiFeO 3 films on SrTiO 3 (001) and Nb doped SrTiO 3 (001) substrates. The attentive MOCVD process consists of an in situ one step approach using a multi‐metal source precursor mixture composed by Bi(phenyl) 3 and Fe(tmhd) 3 (phenyl = ‐C 6 H 5 ; H‐tmhd = 2,2,6,6‐tetramethyl‐3,5‐heptandione) …”

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

MOCVD Growth of Perovskite Multiferroic BiFeO₃ Films: The Effect of Doping at the A and/or B Sites on the Structural, Morphological and Ferroelectric Properties

Catalano

Spedalotto

Condorelli

et al. 2017

Adv Materials Inter

Self Cite

View full text Add to dashboard Cite

reflects the promising applications of magnetoelectrics including magnetic field sensors, transducers, microwave devices, oscillators, phase shifters, heterogeneous read/write devices, spintronic devices, and so on. [4][5][6] Among various multiferroics, BiFeO 3 has attracted great attention in the last two decades, being the unique materials to have ferroelectric and magnetic transition temperatures well above room temperature. [7,8] These properties make BiFeO 3 very appealing for the above mentioned applications. In addition, doping BiFeO 3 thin films with rare-earth [9][10][11] represents one of the possible ways to obtain magnetoelectric systems. Recently, an electrical control of magnetic order by manipulating chemical pressure within the material has been achieved by lanthanum substitution in the antiferromagnetic ferroelectric BiFeO 3 . [12] BiFeO 3 oxide system has a slightly distorted perovskite structure. Perovskite structures of general formula ABO 3 play an important role due to their appealing and variegate functional properties. [13] In fact, a wide variety of substitutions at both A and B sites is responsible for the great flexibility of the perovskite structure giving rise to a very large number of derivatives with subtle variations in structure.Great efforts have focused on optimizing undoped BiFeO 3 to enhance the room temperature ferromagnetism. Among the various methods, ion substitution is the most useful and widely applied method to improve the multiferroic properties of BiFeO 3.[14] In particular, a lot of attention has been dedicated on doping of various elements like rare-earth, alkaline-earth metals and transition metals at the A or B site of bismuth ferrite to improve its magnetoelectric properties. [15][16][17] Considerable efforts have been devoted to the synthesis of BiFeO 3 at the nanoscale level [18] and to the study of its ferroelectric properties, but for the above mentioned applications BiFeO 3 is required in thin film forms. Up to date, BiFeO 3 films have been deposited on various substrates using physical vapor deposition techniques such as pulsed laser deposition (PLD), [19][20][21][22] molecular beam epitaxy [23,24] and sputtering. [25][26][27] Atomic layer deposition has been recently applied to the deposition of thin or ultrathin films of BiFeO 3 using a laminar layer approach, alternating Bismuth ferrite (BiFeO 3 ) materials have been the subject of intense research activity in the last two decades. The great interest arises from the BiFeO 3 being one of the rare multiferroic compounds in which ferroelectricity and magnetism coexist at room temperature. To improve these properties several studies have been reported on the doping at the A and/or B sites of the BiFeO 3 perovskite structure. In this short review, the attention is focused to the synthesis of BiFeO 3 and BiFeO 3 doped with Ba or Dy at the A site and Ti at the B site through Metal Organic Chemical Vapor Deposition (MOCVD). The applied MOCVD process consists of an in situ one step approach using a multi-metal s...

show abstract

Section: Mocvd Growth Of Bifeo3 and Doped‐bifeo3 Filmssupporting

confidence: 91%

Section: Mocvd Growth Of Bifeo3 and Doped‐bifeo3 Filmsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

MOCVD Growth of Perovskite Multiferroic BiFeO₃ Films: The Effect of Doping at the A and/or B Sites on the Structural, Morphological and Ferroelectric Properties

Catalano

Spedalotto

Condorelli

et al. 2017

Adv Materials Inter

Self Cite

View full text Add to dashboard Cite

show abstract

“…The main deposition techniques that have been applied to the production of BiFeO 3 films are: chemical solution deposition [20,21], pulsed laser deposition (PLD) [22,23], sputtering [24], sol-gel [15,16], and metal organic chemical vapor deposition (MOCVD) [25][26][27][28]. So far, only sol-gel and sputtering have been applied to deposit BiFeO 3 film used in a piezoelectric harvester [28,29], due to their simplicity and low operating temperature, which enable the use of a wide variety of substrates.…”

Section: Introductionmentioning

confidence: 99%

Piezoelectric BiFeO3 Thin Films: Optimization of MOCVD Process on Si

2020

Self Cite

View full text Add to dashboard Cite

This paper presents a simple and optimized metal organic chemical vapor deposition (MOCVD) protocol for the deposition of perovskite BiFeO3 films on silicon-based substrates, in order to move toward the next generation of lead-free hybrid energy harvesters. A bi-metal mixture that is composed of Bi(phenyl)3, and Fe(tmhd)3 has been used as a precursor source. BiFeO3 films have been grown by MOCVD on IrO2/Si substrates, in which the conductive IrO2 functions as a bottom electrode and a buffer layer. BiFeO3 films have been analyzed by X-ray diffraction (XRD) for structural characterization and by field-emission scanning electron microscopy (FE-SEM) coupled with energy dispersive X-ray (EDX) analysis for the morphological and chemical characterizations, respectively. These studies have shown that the deposited films are polycrystalline, pure BiFeO3 phase highly homogenous in morphology and composition all over the entire substrate surface. Piezoelectric force microscopy (PFM) and Piezoelectric Force Spectroscopy (PFS) checked the piezoelectric and ferroelectric properties of the film.

show abstract

“…The preparation and modification of BFO films have been extensively studied. At present, various techniques have been developed to fabricate BFO films, such as pulsed laser deposition [4], magnetron sputtering [5], molecular beam epitaxy [6], hydrothermal synthesis [7], electrophoretic deposition [8], and metal organic chemical vapor deposition [9]. Moreover, sol-gel method as an alternative route has been widely used to prepare BFO films [10,11] because of its low cost, easy to & Wei Cai caiwei_cqu@163.com adjust composition and integration with devices.…”

Section: Introductionmentioning

confidence: 99%

The effects of grain size on electrical properties and domain structure of BiFeO3 thin films by sol–gel method

Lei

Cai

et al. 2015

J Mater Sci: Mater Electron

View full text Add to dashboard Cite

BiFeO 3 (short for BFO) thin films with different grain sizes were fabricated via sol-gel spin-coating method. The effects of grain size on leakage behavior, dielectric, ferroelectric, piezoelectric properties and domain structure of BFO thin films have been investigated systematically. The X-ray diffraction results show that BFO thin films are rhombohedral distortion perovskite structure. Compared with the films annealed at 550°C, the grain size of BFO thin films annealed at 600°C is larger and the roughness is less, and the crystallinity and purity are higher. The leakage current density of BFO thin films with larger grain size is much lower than that of the films with smaller grain size. It is found that the conduction behavior of BFO thin films with smaller grain size transforms from Ohmic to space-charge-limited current and Fowler-Nordheim tunneling conduction as electric field increases. But there is the only transition from Ohmic conduction to space-charge-limited conduction for the thin films with larger grain size as electric field increase. The room temperature dielectric constant and remnant polarization of BFO thin films with larger grain size are higher than that of the films with smaller grain size. The ferroelectric domain size increases with the increase of grain size so that the ferroelectric polarization in BFO thin films with larger grain size enhances. Moreover, it is found that there are negatively charged ''tail to tail'' domain wall in BFO thin films with smaller grain size and positively charged ''head to head'' domain wall in the sample with larger grain size. The majority carriers including positively charged hole or oxygen vacancy assemble on negatively charged ''tail to tail'' domain wall in p-type BFO thin films with smaller grain size and result in relative higher leakage current. The piezoelectric coefficient of the films with larger grain size is much higher than that of the sample with smaller grain size.

show abstract

Piezoelectric domains in BiFeO3 films grown via MOCVD: Structure/property relationship

Cited by 12 publications

References 20 publications

MOCVD Growth of Perovskite Multiferroic BiFeO₃ Films: The Effect of Doping at the A and/or B Sites on the Structural, Morphological and Ferroelectric Properties

MOCVD Growth of Perovskite Multiferroic BiFeO₃ Films: The Effect of Doping at the A and/or B Sites on the Structural, Morphological and Ferroelectric Properties

Piezoelectric BiFeO3 Thin Films: Optimization of MOCVD Process on Si

The effects of grain size on electrical properties and domain structure of BiFeO3 thin films by sol–gel method

Contact Info

Product

Resources

About

Piezoelectric domains in BiFeO3 films grown via MOCVD: Structure/property relationship

Cited by 12 publications

References 20 publications

MOCVD Growth of Perovskite Multiferroic BiFeO3 Films: The Effect of Doping at the A and/or B Sites on the Structural, Morphological and Ferroelectric Properties

MOCVD Growth of Perovskite Multiferroic BiFeO3 Films: The Effect of Doping at the A and/or B Sites on the Structural, Morphological and Ferroelectric Properties

Piezoelectric BiFeO3 Thin Films: Optimization of MOCVD Process on Si

The effects of grain size on electrical properties and domain structure of BiFeO3 thin films by sol–gel method

Contact Info

Product

Resources

About

MOCVD Growth of Perovskite Multiferroic BiFeO₃ Films: The Effect of Doping at the A and/or B Sites on the Structural, Morphological and Ferroelectric Properties

MOCVD Growth of Perovskite Multiferroic BiFeO₃ Films: The Effect of Doping at the A and/or B Sites on the Structural, Morphological and Ferroelectric Properties