Dynamic characterization of SiC and GaN devices with BTI stresses

Abstract

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Characterizing Threshold Voltage Shifts and Recovery in Schottky Gate and Ohmic Gate GaN HEMTs

“…Commercially available GaN HEMTs have been the subject of different studies including electrothermal characterization [5][6][7]and reliability studies (summarized in [8]), with a JEDEC committee (JC-70) focused on the development of standards for GaN power devices [9,10]. The reliability studies include power cycling [11][12][13], dynamic ON-state resistance [14][15][16] and threshold voltage (VTH) instability [17][18][19][20][21][22][23], which is the focus of the investigations presented in this paper.…”

Gate stresses and threshold voltage instability in normally-OFF GaN HEMTs

“…6(b) for the SG and OG HEMT respectively. These results indicate that the gate leakage currents could be a Temperature Sensitive Electrical Parameter (TSEP) for GaN devices [14], which can be added to the TSEPs already presented in [15,16]. In the case of the SG HEMT, for a gate voltage of 5 V, the gate leakage current increases almost 60 times, whereas in the case of the OG HEMT the increase is 2.7 times when a gate voltage of 3.5 V is used.…”

The impact of electrothermal stress on threshold voltage drift of gan and SIC cascode devices

“…Considering the 650 V SiC cascode power device at high temerature, it has no impact on the transfer characteristics while stressing of the device even after 1000 sec as it is demonstrated. Furthermore, the drain current level of the devices are both decreasing at higher temperature, it is expected regarding the relationship between drain current and temperature in the power devices and also the impact of the temperature on the mobility of the devices [14,15]. When the cascode devices are heated up from 25ºC to 175ºC in steps of 50ºC and their threshold voltage shifts against the stress period are illustrated in Fig.…”