Dynamic chemical mapping near a Si/SiO₂ interface at elevated temperatures using plasmon‐loss images

Abstract

Plasmon‐loss imaging was applied to chemical mapping during an in‐situ heating experiment. The technique was applied to observation of vibration of a Si/SiO2 interface which took place during reduction of SiO2 at high temperature. The chemical maps of Si and SiO2 were recorded dynamically using a conventional TV‐VTR system at a time resolution of 1/30 s.

The role of the interface in germanium quantum dots: when not only size matters for quantum confinement effects

“…The latter component gives another broad contribution peaked at around 46 eV due to the double plasmon loss in SiO 2 . 37 The remaining components are related to the inter-band transitions of the Ge-SiO 2 hetero-structure (5-10 eV range) and to the broad M 4,5 ionization edge of Ge QD, starting at around 29 eV. This latter contribution gives important information on the chemical arrangement at the interface of Ge QDs.…”

Signature of plasmon excitations in the stopping ratio of fast hydrogen clusters

“…In the case of thin films, different electron-based techniques have been used to study plasmon excitations. [2][3][4] One example is the electron energy-loss spectroscopy technique, 5 where the energy of the transmitted electrons is recorded. This technique, however, proved not to be well suited for experiments using energetic ions since the energy-loss spectrum of the transmitted ions stems from multiple scattering events, which mask the effect due to the plasmon excitations.…”