Electrical conductivity measurement of silicon wire prepared by CVD

Suzuki, Hiroshi; Araki, Hiroshi; Tosa, Masahiro; Noda, Tetsuji

doi:10.1016/j.cplett.2008.11.090

Cited by 4 publications

(2 citation statements)

References 21 publications

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“…CVD method needs to add Au, Ti, Cu and other metal catalysts. H. Suzuki, et al [4] put a P-type Si plate which had been deposited 2nm Au on the surface into a vacuum reactor and heated to 569K, then the mixture gas composed by pure Ar gas and 10% Si 2 H 6 gas diluted with H 2 were introduced into the chamber. Si atoms and Au atoms which decomposed from Si 2 H 6 formed Au-Si alloy droplets where the SiNWs grown.…”

Section: Chemical Vapor Deposition (Cvd)mentioning

confidence: 99%

Research Survey on Synthesis Methods of Silicon Nanowires

Zheng

Yan²,

Wang³

2011

AMR

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Silicon nanowires (SiNWs) are new one-dimensional material with unique properties, which have been widely used in field-effect devices, nano-sensors and other nano-electronic devices. In this paper, the new progress in research on the synthesis methods of SiNWs is summarized. The influencing factors and characteristics of each synthesis method are discussed. Finally, a new method is put forward which based on the advantages both on thermal evaporation and template method, and this method can synthesize SiNWs arrays with uniform diameter, high-order, high-purity and with high-yield. This method will be a new research orientation in the future.

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Section: Chemical Vapor Deposition (Cvd)mentioning

confidence: 99%

Research Survey on Synthesis Methods of Silicon Nanowires

Zheng

Yan²,

Wang³

2011

AMR

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“…The VLS mechanism really represents the core of silicon wire research, though it works not only for silicon but also for a much broader range of wire materials. The VLS mechanism can be explained on the basis of Au catalyzed Si wire growth on silicon substrates by means of chemical vapor deposition (CVD) using a gaseous silicon precursor such as silane [6].…”

Section: Introductionmentioning

confidence: 99%

Silicon Nanowires Fabrication by Physical Method

Thủy¹

2018

JST

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Silicon nanowires (Si NWs) were fabricated on Si(111) surfaces by both thermal evaporation and sputtering methods. Au nanocrystals were used as the metal catalysts and they were fabricated by electron beam evaporation. The field emission scanning electron microscopy (FESEM) was used to characterize the Si NWs. The diameters of the Si NWs were measured to be about few tens of nanometer. The mechanism of the nanowires formation by these methods was also discussed.

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