power consumption and minimizing cross-talk (maintain signal fidelity). As a result, terabit data communication can be made feasible with the help of broadband all-optical devices and circuits. [4] The technology for designing optical components and circuits operating at visible and NIR wavelengths has matured significantly over the last several decades, ensuring their widespread integration. While we can work toward improving data transmission rates of existing communication technology, shortage of spectral bandwidth for data transmission has become a looming problem over time. This has motivated researchers to seek out previously unused portions of the electromagnetic spectrum. The "terahertz gap" (≈30 µm-3 mm) has attracted considerable attention from researchers seeking to bridge the gap between the optical/IR and microwave spectrum. [5,6] Similar to the optical domain, the invention, optimization, and commercialization of discrete components such as sources, modulators, and detectors are necessary for the widespread use and integration of terahertz technologies. Electronic means of terahertz generation utilizing semiconductors (Si, GaAs) IMPATT [7] and Gunn diodes [8] have been developed. In conjunction with a frequency doubler/ tripler circuits, they typically operate on the lower end of the terahertz spectrum (0.1-1 THz); although the power output at higher frequency multiples might be significantly lower as compared to its fundamental mode. Additionally, InGaAs/ InP HBTs and InP HEMTs with cutoff frequencies >600 GHz have been demonstrated. [9,10] The advent of femtosecond lasers has paved the way for the generation of terahertz radiation via photoconductive switches, [11] photo-Dember effect [12,13] and nonlinear optical rectification in organic and inorganic crystals. [14][15][16] Femtosecond lasers have helped develop time domain terahertz systems that have been instrumental in ultrafast spectroscopy to study transient carrier dynamics of semiconductors. Development of terahertz quantum cascade lasers (THz-QCL) employing intersubband transitions in AlGaAs/GaAs quantum wells [17][18][19][20] is a notable milestone in terahertz lasing. In a complementary fashion, terahertz detection could be performed by electro-optic sampling in nonlinear crystals, [21] photoconductive antennas on low-temperature GaAs, [22,23] plasma wave oscillation in a field-effect channel, [24,25] etc. Finally, akin to the compact and economic components available at optical frequencies for the generation, manipulation, and detection, terahertz technology requires Terahertz waves spanning over the 0.1 to 10 THz region of the electromagnetic spectrum have attracted significant attention owing to a variety of potential applications such as short-range high-speed data transmission, noninvasive screening and detection, materials characterization, spectroscopy, etc. This has resulted in massive strides in the development of essential system components such as broadband terahertz sources, detector arrays with high responsivity, as well as...