Dynamic model for pseudomorphic structures grown on compliant substrates: An approach to extend the critical thickness

Teng, Da; Lo, Yu‐Hwa

doi:10.1063/1.108813

Cited by 58 publications

(31 citation statements)

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“…The first was the cantilevered membrane, first proposed by Teng and Lo 14 and also demonstrated by Chua et al 15 These implementations used two or four mounting points. Jones et al 16 also demonstrated pedestalmounted compliant membranes for the growth of InGaAs quantum well structures on GaAs substrates.…”

Section: Implementation Of Cantilevered Membrane Compliant Substratesmentioning

confidence: 99%

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Compliant Substrates for Heteroepitaxial Semiconductor Devices: Theory, Experiment, and Current Directions

Ayers

2008

Journal of Elec Materi

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This review paper presents important findings relative to the use of compliant substrates for mismatched heteroepitaxial devices, including the theoretical background, experimental results, and the directions for current efforts. Theories for relative compliance and absolute compliance are presented. Key experimental results are summarized for a number of compliant substrate technologies, including cantilevered membranes, silicon-on-insulator, twist bonding, and glass bonding. Two approaches of current interest, layer transfer and universal compliant trench (UCT) substrates, are presented as potential solutions to the problem of limited absolute compliance in planar compliant substrates attached to handle wafers.

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Section: Implementation Of Cantilevered Membrane Compliant Substratesmentioning

confidence: 99%

“…Teng and Lo 14 first proposed a cantilevered membrane compliant substrate. Their design, shown in Fig.…”

Section: Multipoint-mounted Membranesmentioning

confidence: 99%

Compliant Substrates for Heteroepitaxial Semiconductor Devices: Theory, Experiment, and Current Directions

Ayers

2008

Journal of Elec Materi

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“…If the buried layer is close enough to the surface, it might be possible to grow thicker layers without degradation because most of the stress is expected to be absorbed on the thin substrate. 9,10 In this communication we report the formation of a shallow buried SiN x layer by low energy N ϩ ion implantation and subsequent annealing.N type float zone ͑FZ͒ ͗100͘ silicon wafers were used in these experiments. These wafers have a resistivity over 50 ⍀ cm and oxygen content below 0.3 ppm.…”

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confidence: 99%

Shallow buried SiNx layers

Barbadillo

Hernández

Cervera

et al. 2000

Journal of Applied Physics

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High dose nitrogen implantations have been performed at an energy of 30 keV. After high temperature annealing, 1200°C, a buried layer composed mostly of silicon nitride is formed leaving an overlayer with a high fraction of crystalline silicon. The lattice constant of the overlayer and the region below the SiN x are reduced in 0.13% and 0.089%, respectively. The substitutional N seems to be responsible for this reduction. © 2000 American Institute of Physics. ͓S0021-8979͑00͒00211-5͔Separation by implantation of oxygen is a well established technology for a variety of applications such as ultralow scale integration, high voltage devices, and micromachining of sensors and actuators. Nitrogen implantation has also been proposed to synthesize silicon-on-insulator ͑SOI͒ layers because of the better stability, the lower doses required, and the excellent barrier against impurity diffusion of the Si 3 N 4 compared to SiO 2 . [1][2][3][4] More recently the use of SOI layers as compliant substrates has been reported. [5][6][7][8] For these applications, O ϩ ions, for instance, 6 are implanted in silicon wafers. After implantation a high temperature annealing leads to the growth of a SiO 2 buried layer and a good crystalline quality Si overlayer. If the buried layer is close enough to the surface, it might be possible to grow thicker layers without degradation because most of the stress is expected to be absorbed on the thin substrate. 9,10 In this communication we report the formation of a shallow buried SiN x layer by low energy N ϩ ion implantation and subsequent annealing.N type float zone ͑FZ͒ ͗100͘ silicon wafers were used in these experiments. These wafers have a resistivity over 50 ⍀ cm and oxygen content below 0.3 ppm. Implantations were carried out in a modified Varian Extrion ion implanter. Different doses of 14 N ϩ , 1ϫ10 16 , 1ϫ10 17 , and 6.7 ϫ10 17 cm Ϫ2 , well over the critical amorphization dose for these ions in silicon ͑of about 10 15 cm Ϫ2 ), at an energy of 30 keV were implanted. The sample holder used for the implantations was maintained at room temperature by means of a closed cycle circuit, and the slight increase of the sample temperature only allowed some relaxation of the amorphous network. The highest dose was chosen to obtain a concentration of nitrogen in about 0.1 m similar to the bulk silicon concentration. Afterwards the samples were annealed in nitrogen gas. Two of the samples of each dose were rapid thermal annealed ͑RTA͒ for 1 min at 600 and 1200°C and a third one furnace annealed for 15 min at 1200°C.Fourier transform infrared ͑FTIR͒ spectroscopy, spectroscopic ellipsometry, x-ray diffraction ͑XRD͒, and spreading resistance techniques were used for characterization.IR measurements in transmission mode, shown in Figs. 1͑a͒ and 1͑b͒, were performed in Bruker equipment to identify the chemical bonds present in the samples. An unimplanted silicon wafer has been used as reference and no baseline correction has been done. The antireflecting behavior of the implanted layer leads to an overesti...

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“…3 An ideal compliant substrate consists of a thin ''template'' layer mechanically decoupled from a thicker ''handle'' wafer. Calculations [3][4][5][6] of the strain partitioning in such a system predict enhanced relaxation without structural degradation of a mismatched film grown to a thickness well beyond the conventional h c on a template whose thickness is less than or approximately equal to h c .…”

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InGaAs heteroepitaxy on GaAs compliant substrates: X-ray diffraction evidence of enhanced relaxation and improved structural quality

Moran

Hansen

Matyi

et al. 1999

Applied Physics Letters

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In 0.44 Ga 0.56 As ͑3% mismatch͒ films 3 m thick were grown simultaneously on a conventional GaAs substrate, glass-bonded GaAs compliant substrates employing glasses of different viscosity, and a twist-bonded GaAs compliant substrate. High-resolution triple-crystal x-ray diffraction measurements of the breadth of the strain distribution in the films and atomic force microscopy measurements of the film's surface morphology were performed. The films grown on the glass-bonded compliant substrates exhibited a strain distribution whose breadth was narrowed by almost a factor of 2 and a surface roughness that decreased by a factor of 4 compared to the film simultaneously grown on the conventional substrate. These improvements in the film's structural quality were observed to be independent of the viscosity of the glass-bonding media over the range of viscosity investigated and were not observed to occur for the film grown on the twist-bonded substrate. © 1999 American Institute of Physics. ͓S0003-6951͑99͒01637-X͔ Limits on the structural quality of an epitaxial film which is lattice mismatched to the substrate precludes many potential device applications of heteroepitaxial semiconductor structures. Thin mismatched films retain a pseudomorphic strain so as to match the lattice constant of the much thicker substrate in the plane of the interface. Relaxation of a mismatched film grown beyond some critical thickness, 1 h c , which decreases with increasing mismatch, occurs at the expense of the film's structural quality. The film is eventually fully relaxed to its bulk lattice constant as it is grown beyond h c through the generation of an increasing number of misfit dislocations at the film/substrate interface and the subsequent propagation of threading dislocations into the film. 2 The concept of a compliant substrate has been proposed as a method for modifying the relaxation behavior of the heterostructure. 3 An ideal compliant substrate consists of a thin ''template'' layer mechanically decoupled from a thicker ''handle'' wafer. Calculations 3-6 of the strain partitioning in such a system predict enhanced relaxation without structural degradation of a mismatched film grown to a thickness well beyond the conventional h c on a template whose thickness is less than or approximately equal to h c .Experimentally realized compliant substrates have not had template layers that are completely decoupled from the handle wafer. Two approaches to fabricating macroscopic compliant substrates have predominated. The first utilized a metal 7 or glass 8-11 media to join the template and handle. The second approach employed twist-bonded ͑TB͒ substrates, 12,13 in which the template was directly bonded to the handle with an intentional azimuthal angular misorientation . The exact influence of the critical template/handle interface on film relaxation is uncertain at present. In glassbonded substrates, the ability of the glass to flow under a shear strain has been proposed as a means to allow strain relaxation. 9,14 This mechanism depends ...

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Dynamic model for pseudomorphic structures grown on compliant substrates: An approach to extend the critical thickness

Cited by 58 publications

References 6 publications

Compliant Substrates for Heteroepitaxial Semiconductor Devices: Theory, Experiment, and Current Directions

Compliant Substrates for Heteroepitaxial Semiconductor Devices: Theory, Experiment, and Current Directions

Shallow buried SiNx layers

InGaAs heteroepitaxy on GaAs compliant substrates: X-ray diffraction evidence of enhanced relaxation and improved structural quality

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