Dynamic Properties of Monolithic 1.3 μm InAs/GaAs Quantum Dot Lasers on Silicon

Hantschmann, Constanze; Vasil'ev, Petr P; Chen, Siming M.; Liao, Mengya; Seeds, A.J.; Liu, Huiyun; Penty, R.V.; White, I.H.

doi:10.1109/islc.2018.8516205

Cited by 1 publication

(1 citation statement)

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“…This is potentially a smaller issue for high-gain QD lasers as modelled here, but might pose a problem for QD lasers at high dislocation densities with limited modal gain (10 cm -1 -20 cm -1 , for example). Besides high damping induced by a short differential carrier lifetime, this offers another possible explanation of the large K-factors so far observed in directly modulated QD lasers grown on silicon [46], [47]. Table I.…”

Section: Key Findings and Discussionmentioning

confidence: 92%

Theoretical Study on the Effects of Dislocations in Monolithic III-V Lasers on Silicon

Hantschmann

Liu

Tang

et al. 2020

J. Lightwave Technol.

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In this work, we present an approach to modelling III-V lasers on silicon based on a travelling-wave rate equation model with sub-micrometer resolution. By allowing spatially resolved inclusion of individual dislocations along the laser cavity, our simulation results offer new insights into the physical mechanisms behind the characteristics of 980 nm In(Ga)As/GaAs quantum well (QW) and 1.3 m quantum dot (QD) lasers grown on silicon. By studying the reduction of the local gain in carrierdepleted regions around dislocation locations and the resulting impact on threshold current increase and slope efficiency at high dislocation densities, we identify two effects with particular importance for practical applications. First, a large minority carrier diffusion length is a key parameter inhibiting laser operation by enabling carrier migration into dislocations over larger areas, and secondly, increased gain in dislocation-free regions compensating for gain dips around dislocations may contribute to gain compression effects observed in directly modulated silicon-based QD lasers. We believe that this work is an important contribution in creating a better understanding of the processes limiting the capabilities of III-V lasers on silicon in order to explore suitable materials and designs for monolithic light sources for silicon photonics.

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Section: Key Findings and Discussionmentioning

confidence: 92%