Theoretical Study on the Effects of Dislocations in Monolithic III-V Lasers on Silicon

Hantschmann, Constanze; Liu, Zizhuo; Tang, Mingchu; Chen, Siming; Seeds, A.J.; Liu, Huiyun; White, I.H.; Penty, R.V.

doi:10.1109/jlt.2020.2994300

Cited by 17 publications

(8 citation statements)

References 46 publications

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“…Dislocations arise from strain relaxation when growing a layer with a lattice constant different than that of the substrate, and are thus unavoidable. Since they act as non-radiative recombination centers, the density of threading dislocations should in principle be reduced to limit device degradation 51 , 52 . When GaSb is grown on substrates such as GaAs or Si, the large lattice-mismatch (8 or 12%, respectively) induces the formation of an interfacial network of edge-type misfit dislocations 53 – 57 that provides the most efficient strain-relaxation pathway 58 .…”

Section: Epitaxial Growth Of Antimonide Heterostructures On (001)si S...mentioning

confidence: 99%

Mid-infrared III–V semiconductor lasers epitaxially grown on Si substrates

et al. 2022

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There is currently much activity toward the integration of mid-infrared semiconductor lasers on Si substrates for developing a variety of smart, compact, sensors based on Si-photonics integrated circuits. We review this rapidly-evolving research field, focusing on the epitaxial integration of antimonide lasers, the only technology covering the whole mid-to-far-infrared spectral range. We explain how a dedicated molecular-beam epitaxy strategy allows for achieving high-performance GaSb-based diode lasers, InAs/AlSb quantum cascade lasers, and InAs/GaInSb interband cascade lasers by direct growth on on-axis (001)Si substrates, whereas GaAs-on-Si or GaSb-on-Si layers grown by metal-organic vapor phase epitaxy in large capability epitaxy tools are suitable templates for antimonide laser overgrowth. We also show that etching the facets of antimonide lasers grown on Si is a viable approach in view of photonic integrated circuits. Remarkably, this review shows that while diode lasers are sensitive to residual crystal defects, the quantum cascade and interband cascade lasers grown on Si exhibit performances comparable to those of similar devices grown on their native substrates, due to their particular band structures and radiative recombination channels. Long device lifetimes have been extrapolated for interband cascade lasers. Finally, routes to be further explored are also presented.

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Section: Epitaxial Growth Of Antimonide Heterostructures On (001)si S...mentioning

confidence: 99%

Mid-infrared III–V semiconductor lasers epitaxially grown on Si substrates

et al. 2022

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“…In contrast, there was no lasing observed for the QW device at roomtemperature even at higher injection levels. After comparing with modelling results, this study indicated that QW laser cannot work properly above 10 7 cm À2 of TDD [100,101]. Figure 28c presented a temperature dependent light-current curve of QD laser on Si (001).…”

Section: Inas/gaas Qd Laser On On-axis Si (001) Substratementioning

confidence: 87%

“…As discussed in the first section of this chapter, the heteroepitaxy technique on on-axis Si (001) was satisfied by forming APB-free GaAs buffer. Beyond the successful demonstration of QD lasers on offcut Si platform, QD lasers grown on CMOS-compatible Si (001) substrate were successfully developed in recent years [98][99][100][101][102][103][104][105], owing to the demonstration of the APB-free GaAs and GaP templates on Si.…”

Section: Inas/gaas Qd Laser On On-axis Si (001) Substratementioning

confidence: 99%

GaAs Compounds Heteroepitaxy on Silicon for Opto and Nano Electronic Applications

Martin¹,

Baron²,

Bogumulowicz³

et al. 2021

Post-Transition Metals

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III-V semiconductors present interesting properties and are already used in electronics, lightening and photonic devices. Integration of III-V devices onto a Si CMOS platform is already in production using III-V devices transfer. A promising way consists in using hetero-epitaxy processes to grow the III-V materials directly on Si and at the right place. To reach this objective, some challenges still needed to be overcome. In this contribution, we will show how to overcome the different challenges associated to the heteroepitaxy and integration of III-As onto a silicon platform. We present solutions to get rid of antiphase domains for GaAs grown on exact Si(100). To reduce the threading dislocations density, efficient ways based on either insertion of InGaAs/GaAs multilayers defect filter layers or selective epitaxy in cavities are implemented. All these solutions allows fabricating electrically pumped laser structures based on InAs quantum dots active region, required for photonic and sensing applications.

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“…Si/SiO2 waveguides. Additionally, dislocations can be present even in the QD-layer region leading to non-radiative recombination of minority carriers and gain compression effects as observed in directly modulated Si-based QD lasers [86].…”

Section: Group-iii-v On Group-iv Approachesmentioning

confidence: 99%

Light-Emission from Ion-Implanted Group-IV Nanostructures

Brehm

2021

Topics in Applied Physics

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Silicon photonics is destined to revolutionize technological areas, such as short-distance data transfer and sensing applications by combining the benefits of integrated optics with the assertiveness of siliconbased microelectronics. However, the lack of practical and low-cost silicon-based monolithic light sources such as light-emitting diodes and, in particular, lasers is the main bottleneck for silicon photonics to become the key technology of the 21 st century. After briefly reviewing the state of the art regarding silicon-based light-emitters, we discuss the challenges and benefits of a highly flexible approach: The epitaxial incorporation of group-IV nanostructures into crystalline silicon. We argue that a paradigm change for group-IV quantum dots (QDs) can be achieved by the intentional incorporation of extended point defects inside the QDs upon low energy ion implantation. The superior light-emission properties from such defect-enhanced quantum dots (DEQDs), our present understanding of their structural formation and light-emission mechanisms will be discussed. We will show that useful electrically-driven devices, such as light-emitting diodes (LEDs) can be fabricated employing optically active DEQDmaterial. These LEDs exhibit exceptional temperature-stability of their light emission properties even up to 100°C, unprecedented for purely group-IV-based optoelectronic devices. Thereafter, we will assess the superior temperature stability of the structural properties of DEQDs upon thermal annealing, the scalability of the light-emission with the DEQD density and passivation schemes to further improve the optical properties. The chapter ends with a discussion of future research directions that will spark the development of this exciting field even further.

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Theoretical Study on the Effects of Dislocations in Monolithic III-V Lasers on Silicon

Cited by 17 publications

References 46 publications

Mid-infrared III–V semiconductor lasers epitaxially grown on Si substrates

Mid-infrared III–V semiconductor lasers epitaxially grown on Si substrates

GaAs Compounds Heteroepitaxy on Silicon for Opto and Nano Electronic Applications

Light-Emission from Ion-Implanted Group-IV Nanostructures

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