Dynamic Resistance—A Metric for Variability Characterization of Phase-Change Memory

Abstract

The resistance of phase-change-memory (PCM) cells measured during RESET programming (dynamic resistance, R d ) is found to be inversely proportional to the amplitude of the programming current, as R d = [A/I] + B. We show that parameters A and B are related to the intrinsic properties of the memory cell, and demonstrate by means of experimental data that they could be used to characterize the cell-to-cell process-induced variability of PCM cells.Index Terms-Chalcogenide, electrothermal simulations, nonvolatile memory, phase-change memory (PCM).

Estimation of amorphous fraction in multilevel phase-change memory cells

“…Each cell is connected in series with an nMOSFET access device based on 180 nm CMOS technology [13]. Fig.…”

Projected Mushroom Type Phase‐Change Memory

“…This is realized using the resistance presented by the liner to the current that flows into it (this can be seen as the current that flows parallels to r BE ). If an approximation is then made for the amorphous volume to have shape of a hemispherical dome, and the liner as a cylindrical disc [32][33][34] (see Figure 1B), the u a dependence of R Amor , R Crys , and R Liner on geometrical arguments can be expressed by the terms in the square brackets of equations…”

Nonstationary distributions and relaxation times in a stochastic model of memristor

“…Intrinsic stochasticity appears as significant fluctuations in values of cycle-to-cycle resistance levels and lack of predictability in response to the driving electric pulses leading to insucient read margin between the programmed resistance states. This fact has been perceived across a range of nonvolatile memory technologies such as phase-change memory [18,19], resistive random access memory [20,21], electrochemical metallization memory [22], conductive bridge random access memory [23], and among oxide-based memristive materials [9,[24][25][26]. On the other hand, the non-deterministic behavior of circuit elements is the common feature of nanoelectronics and gives the ground for the newly established field of study named as stochastic electronics [27,28].…”