Dynamic strain aging in Czochralski-grown silicon single crystals

Yield point of as-grown and predeformed GaAs:Zn

“…The stress exponent ͑close to 3 in most cases͒ may not be changed; only the activation energy U may be changed to some extent on ac-count of a ͑nonlocal͒ influence of doping on the Peierls potential. This regime has been observed in doped Ge, 29 Si, 33,34 InP, 31,32 and GaAs. 7-9 Regime B*, finally, is somewhat intermediate between the regimes B and C. The stress exponent is clearly larger than 3.…”

“…5͑b͔͒, or becomes more or less temperature independent. 22,23 In regime B, which has been observed in doped GaAs, 17 Ge, 29 and Si, 33,34 there is no strain rate but a weak temperature dependence. It has been assumed 29,34 that the underlying athermal process is the locking and breaking away of dislocations from the impurity clouds gathered on moving ͑dynamic strain aging͒.…”

The mechanism of the anomalous behavior of the plastic flow of materials with high crystal relief caused by the dynamic impurity subsystem

“…where dσ/d ln ε = V dσ/dV and dσ/dV are derived from expression (12). Boundary of dislocation mobility instability area corresponds to rate sensitivity vanishing, thus resulting in peaks of effective activation volume, experimentally observed in diffuse form [3].…”

“…At comparable mobilities of dislocations and impurities the plastic flow instability is often formed, appearing as jumps on strain curves (Portevin−Le Chatelier effect [7][8][9][10][11]). Another mode corresponds to high-mobility impurities, which atmosphere easily follows the dislocations moving, without creation of high additional deceleration [12].…”

Механизм Обусловленного Динамической Примесной Подсистемой Аномального Поведения Пластического Течения Материалов С Высоким Кристаллическим Рельефом

“…При сравнимых подвижностях дислокаций и примесей нередко возникает нестабильность пластического течения, проявляющаяся в виде скачков на деформационных кривых (эффект Портевена−Ле Шателье [7][8][9][10][11]). Еще один режим отвечает высоко подвижным примесям, атмосфера которых легко сопровождает перемещение дислокаций, не создавая большого дополнительного торможения [12].…”