Dynamic Study of the Physical Processes in the Intrinsic Line Electromigration of Deep-Submicron Copper and Aluminum Interconnects

Abstract

Dynamic study of the physical processes in the intrinsic line electromigration of deep-submicron copper and aluminum interconnects

Investigation of the effect of temperature and stress gradients on accelerated EM test for Cu narrow interconnects

“…The description of the model can be found in Ref. [30], and its verification can be found in Ref. [31].…”

“…The details of boundary conditions can be found in Refs. [27,30]. Table 1 shows the model dimension and physical parameters for the line-via EM model Material parameters used in the models is shown in Table 2.…”

Morphological evolution of voids by surface drift diffusion driven by capillary, electromigration, and thermal-stress gradients induced by steady-state heat flow in passivated metallic thin films and flip chip solder joints. I. Theory

“…That is a great dilemma, which implies that the vacancy concentration is uniform ͑homogenous distribution͒ in the interconnect line, and it changes as an exponential function of time, keeping the uniformity in space. 41 Tan et al 43 in one of their studies were interested to simulate the growth behavior of a pre-existent void on top of the interconnect line, where they modified the void simulation algorithm proposed by Dalleau et al 41 to include the surface drift diffusion into the scenario. In that study, they employed directly the software available in ANSYS™ to calculate the thermal-electrical and thermalmechanical coupled-field analyses, which resulted in proper evaluation of the various fluxes and flux divergences to be used in the void surface displacement velocity calculations.…”

Challenges and potential of new approaches for reliability assessment of nanotechnologies

“…However, this must carried out based on prior scientific and technical knowledge and lead quickly to results, because of the actual requirements of reliability for an integration of these devices in the industrial, technological environment. Among these failure mechanisms, we can list [4][5][6]:…”