Dynamic Switching of SiC Power MOSFETs Based on Analytical Subcircuit Model

Talesara, Vishank; Xing, Diang; Fang, Xiangxiang; Fu, Lixing; Shao, Yingjuan; Wang, Jin; Lu, Wu

doi:10.1109/tpel.2020.2972453

Cited by 21 publications

(7 citation statements)

References 17 publications

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“…Hefner's physical IGBT model is also available in Saber simulator. Other physicsbased models have been proposed in the literature for IGBT [49]- [53] and power MOSFET [54]- [56] as the most common switching devices of power converters. SPICE-based simulation tools, PSIM and ANSYS Simplorer are among standard circuit simulation tools.…”

Section: B Switching Devicesmentioning

confidence: 99%

Modeling of Conducted Emissions for EMI Analysis of Power Converters: State-of-the-Art Review

2020

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Electromagnetic interference issues are associated with high-speed switching of power converters. EMI modeling is an essential tool to study and control the EMI emission, enabling more efficient solutions. A comprehensive review and comparison of different modeling approaches for conducted emissions are provided in this paper, which can be used as a design guideline for engineers. For a motor drive application, common mode and differential mode conducted emissions are studied, and dominant noise production mechanisms are identified. Moreover, a review of various modeling techniques is presented for the main parasitic components of the system. Finally, time domain and frequency domain analysis approaches are explored along with the equivalent circuits which enable fast prediction of EMI emissions. This paper intends to help the reader develop an organized understanding of conducted emission modeling to assist them with a more efficient and electromagnetically-compatible design. INDEX TERMS Circuit modeling, common mode, conducted emission, differential mode, electromagnetic interference (EMI), motor drive inverters.

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Section: B Switching Devicesmentioning

confidence: 99%

Modeling of Conducted Emissions for EMI Analysis of Power Converters: State-of-the-Art Review

2020

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“…Considering different parasitic parameters, Bonyadi et al (2015), Wang et al (2019), and Talesara et al (2020) provided the behavior model of the half bridge applying SiC MOSFETs, and the simulation and experiment results show that the overshoots and oscillations are mainly caused by the parasitic inductance in the loop, which should be reduced as much as possible. The analytical model is proposed in Stark et al (2021) to characterize the switching behaviors of the SiC MOSFET.…”

Section: Introductionmentioning

confidence: 99%

Influence of driving and parasitic parameters on the switching behaviors of the SiC MOSFET

Zhang

2023

Front. Energy Res.

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The SiC MOSFET has lower conduction loss and switching loss than the Si IGBT, which helps to improve the efficiency and power density of the converter, especially for those having strict requirements for volume and weight, for example, electrical vehicles (EVs), on-board chargers (OBCs), and traction drive systems (TDS). However, the faster switching speed will cause overshoot and oscillation problems, which will affect the efficiency and security of the SiC devices and power electronic systems. For the SiC MOSFET to be better used, combining a theoretical analysis, the double-pulse test platform is built. The controllable principles of SiC MOSFETs are validated. The turn-on and turn-off delay, switching delay, switching di/dt, switching du/dt, switching overshoot, and switching loss of SiC MOSFETs under different driving and parasitic parameters are explored. Finally, some valuable suggestions for designing are proposed for a better application of the SiC MOSFET.

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“…Among them, physics-based and numerical models can provide accurate simulation results based-on the carrier transportation in the channel and drift regions [11], [12]. Physics-based and numerical-based models are built based on the device geometry such as the channel length and width, the thickness of the gate oxide layer and N-drift region, doping concentration of different regions, etc [13]. Therefore, the model built for one device can be extended to another device with different current or voltage levels by adjusting the physical parameters of the model [14].…”

Section: Introductionmentioning

confidence: 99%

Hybrid Data-Driven Modeling Methodology for Fast and Accurate Transient Simulation of SiC MOSFETs

Yang

Ming

Liang

et al. 2022

IEEE Trans. Power Electron.

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To enable fast and accurate models of SiC MOS-FETs for transient simulation, a hybrid data-driven modeling methodology of SiC MOSFETs is proposed. Unlike conventional modeling methods that are based on complex nonlinear equations, data-driven Artificial Neural Networks (ANNs) are used in this paper. For model accuracy, the I-V characteristics are measured in the whole operation region to train the ANN. The ANN model is then combined with behavior-based equations to model the cutoff region and to avoid overfitting the ANN. In addition, the C-V characteristics are modeled by ANNs with a logarithmic scale for accuracy. The proposed model is implemented and simulated in SPICE simulator SIMetrix. The simulation results are compared with experimental results from a double-pulse tester to validate the proposed modeling methodology. The model is also compared with the Angelov model created by the Keysight MOSFET modeling software. The comparison results show that the proposed model is more accurate than the Angelov model. Besides, when compared to the Angelov model, the proposed model requires 30% less computation time when simulating a double pulse tester. In addition, the proposed modeling method also has better adaptability to model different types of SiC MOSFETs.Index Terms-SiC MOSFET, transient model, hybrid modeling, artificial neural network.

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Dynamic Switching of SiC Power MOSFETs Based on Analytical Subcircuit Model

Cited by 21 publications

References 17 publications

Modeling of Conducted Emissions for EMI Analysis of Power Converters: State-of-the-Art Review

Modeling of Conducted Emissions for EMI Analysis of Power Converters: State-of-the-Art Review

Influence of driving and parasitic parameters on the switching behaviors of the SiC MOSFET

Hybrid Data-Driven Modeling Methodology for Fast and Accurate Transient Simulation of SiC MOSFETs

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