Dynamic variability in 14nm FD-SOI MOSFETs and transient simulation methodology

Noise and Fluctuations in Fully Depleted Silicon-on-Insulator MOSFETs

“…Details of this simulation process can be found elsewhere [92], [93]. As a result, when a transient I d -V g simulation with a ramp gate voltage as an input is run repeatedly, it produces a set of curves as in Figure 48(a) (after [94]), where we show an example of 100 multiple runs. The disadvantage of this simulation approach is that the noise bandwidth Δf = f max -f min taken into account by the TN is limited by the rise time, i.e.…”

“…This leads to a constant threshold voltage variation σ Vth for all rise time values (see Figure 48(b)), because the low-frequency part of the spectrum is not considered. To resolve this issue, one can use the Periodic Transient Noise (PTN) approach [94], which means running a periodic transient simulation instead of multiple runs, with the TN module activated. This can enlarge the simulation duration and thus increase the noise bandwidth to lower frequencies as much as necessary.…”

“…a) Transient noise simulation (100 multiple runs) example . b) Dynamic standard deviation of V th versus rise time for periodic and multiple runs transient noise simulation (W = 80 nm, L = 30 nm, S Vg =A/f with A=1.8×10-8 Hz) (from[94]). …”

Effect of SiO2 sublayer on the retention characteristics of nanometer-sized Si3N4 memristive devices investigated by low-frequency noise spectroscopy

“…Today's understanding of the bipolar RS mechanism in oxides is based on the concept of conductive filaments consisting of the oxygen vacancies, formed inside the dielectric films along the electric field lines between conductive electrodes. [26][27][28][29][30] In the low resistance state (LRS) of the memristor, the filaments shortcut the electrodes of the memristor structure. Switching to the high resistance state (HRS) is achieved by applying a reverse voltage to the electrodes leading to the rapture of the filaments.…”