Dynamical and Steady State Processes of Probe Absorption-Dispersion in a Four-Level Quantum Dot Nanostructure

Abstract

In this paper, we investigated the transient electron population and the transient behaviour of the dispersion, absorption and refractive property of weak probe light in a four-level InGaN/GaN quantum dot nanostructure. In order to achieve the wave functions and their corresponding energy levels of the mentioned quantum dot nanostructure, the Schrödinger and Poisson equations is solved selfconsistently for carriers (here electron) in quantum dot. Our findings show that the properties of transient processes can be dramatically affected by parameters such as intensity, detuning and relative phase of applied fields. Our proposed scheme provides a realistic model for transient control of refraction index properties in a quantum dot nanostructure. These results may have potential applications in high speed optical switch for quantum information technologies.

Optical properties of 87Rb atomic vapor near the 1D photonic crystal bandgap and all-optical switching of transmitted light

“…Electromagnetic induced transparency (EIT) [7,8] is a very important phenomenon that is based on quantum interference and quantum coherence and leads to controlling the group velocity and controlling the absorption and dispersion properties of light in mediums. So far, many quantum systems have been proposed based on atomic vapor and solid states to study the quantum phenomena in vacuum [9][10][11][12][13][14], but for use in optical devices, it needs to be studied in a non-vacuum environment. The photonic crystal is an important environment in which a quantum system can be studied that will have very important results in improving quantum properties and quantum phenomena [15,16].…”