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In this paper, we investigated the transient electron population and the transient behaviour of the dispersion, absorption and refractive property of weak probe light in a four-level InGaN/GaN quantum dot nanostructure. In order to achieve the wave functions and their corresponding energy levels of the mentioned quantum dot nanostructure, the Schrödinger and Poisson equations is solved selfconsistently for carriers (here electron) in quantum dot. Our findings show that the properties of transient processes can be dramatically affected by parameters such as intensity, detuning and relative phase of applied fields. Our proposed scheme provides a realistic model for transient control of refraction index properties in a quantum dot nanostructure. These results may have potential applications in high speed optical switch for quantum information technologies.

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